Chip Industry Week In Review


Concerns mount on the use of American-manufactured semiconductors in Russian weapons, with Analog Devices, AMD, Intel and TI set to testify next week before the U.S. Senate Permanent Subcommittee on Investigations. Also, U.S. and other government agencies issued a joint advisory and more details about ongoing Russian military cyberattacks, espionage, and sabotage. The U.S. Commerce Departmen... » read more

Blog Review: Sept. 4


Synopsys' Jyotika Athavale and Randy Fish sit down with Google's Rama Govindaraju and Microsoft's Robert S. Chappell to discuss silent data corruption and why a solution will require chip designers and manufacturers, software and hardware engineers, vendors, and anyone involved in computer data to collaborate and take the issue seriously. Siemens' Karen Chow and Joel Mercier explain the rela... » read more

Chip Industry Technical Paper Roundup: August 20


New technical papers recently added to Semiconductor Engineering’s library: [table id=252 /] More ReadingTechnical Paper Library home » read more

Increasing Roles For Robotics In Fabs


Different types of robots with greater precision and mobility are beginning to be deployed in semiconductor manufacturing, where they are proving both reliable and cost-efficient. Static robots have been used for years inside of fabs, but they now are being supplemented by collaborative robots (cobots), autonomous mobile robots (AMRs), and autonomous humanoid robots to meet growing and widen... » read more

Chip Industry Week In Review


The U.S. Department of Commerce and Texas Instruments (TI) signed a non-binding preliminary memorandum of terms to provide up to $1.6 billion in CHIPS Act funding towards TI’s investment of over $18 billion for three 300mm semiconductor wafer fabs under construction in Texas and Utah. TI also expects to get about $6 billion to $8 billion from the U.S. Department of Treasury’s Investmen... » read more

Improving Parasitic Capacitance In Next-Generation DRAM Devices


As conventional DRAM devices continue to shrink, increases in parasitic capacitance at smaller dimensions can negatively impact device performance. New DRAM structures may be needed in the future, to lower total capacitance and achieve acceptable device performance. In this study, we compare the parasitic capacitance of a 6F2 honeycomb dynamic random-access memory (DRAM) device to the parasitic... » read more

The Impact Of Simulation On The Carbon Footprint of Wafer Fab Equipment R&D


A new technical paper titled "Achieving Sustainability in the Semiconductor Industry: The Impact of Simulation and AI" was published by researchers at Lam Research. Abstract "Computational simulation has been used in the semiconductor industry since the 1950s to provide engineers and managers with a faster, more cost-effective method of designing semiconductors. With increased pressure in t... » read more

Chip Industry Week in Review


Okinawa Institute of Science and Technology proposed a new EUV litho technology using only four reflective mirrors and a new method of illumination optics that it claims will use 1/10 the power and cost half as much as existing EUV technology from ASML. Applied Materials may not receive expected U.S. funding to build a $4 billion research facility in Sunnyvale, CA, due to internal government... » read more

Key Technologies To Extend EUV To 14 Angstroms


The top three foundries plan to implement high-NA EUV lithography as early as 2025 for the 18 angstrom generation, but the replacement of single exposure high-NA (0.55) over double patterning with standard EUV (NA = 0.33) depends on whether it provides better results at a reasonable cost per wafer. So far, 2024 has been a banner year for high-numerical aperture EUV lithography. Intel Foundry... » read more

Improving Line Edge Roughness Using Virtual Fabrication


Line edge roughness (LER) is a variation in the width of a lithographic pattern along one edge of a structure inside a chip. Line edge roughness can be a critical variation source and defect mechanism in advanced logic and memory devices and can lead to poor device performance or even device failure. [1~3]. Deposition-etch cycling is an effective technique to reduce line edge roughness. In this... » read more

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