The Impact Of Simulation On The Carbon Footprint of Wafer Fab Equipment R&D


A new technical paper titled "Achieving Sustainability in the Semiconductor Industry: The Impact of Simulation and AI" was published by researchers at Lam Research. Abstract "Computational simulation has been used in the semiconductor industry since the 1950s to provide engineers and managers with a faster, more cost-effective method of designing semiconductors. With increased pressure in t... » read more

Chip Industry Week in Review


Okinawa Institute of Science and Technology proposed a new EUV litho technology using only four reflective mirrors and a new method of illumination optics that it claims will use 1/10 the power and cost half as much as existing EUV technology from ASML. Applied Materials may not receive expected U.S. funding to build a $4 billion research facility in Sunnyvale, CA, due to internal government... » read more

Key Technologies To Extend EUV To 14 Angstroms


The top three foundries plan to implement high-NA EUV lithography as early as 2025 for the 18 angstrom generation, but the replacement of single exposure high-NA (0.55) over double patterning with standard EUV (NA = 0.33) depends on whether it provides better results at a reasonable cost per wafer. So far, 2024 has been a banner year for high-numerical aperture EUV lithography. Intel Foundry... » read more

Improving Line Edge Roughness Using Virtual Fabrication


Line edge roughness (LER) is a variation in the width of a lithographic pattern along one edge of a structure inside a chip. Line edge roughness can be a critical variation source and defect mechanism in advanced logic and memory devices and can lead to poor device performance or even device failure. [1~3]. Deposition-etch cycling is an effective technique to reduce line edge roughness. In this... » read more

Blog Review: July 17


Cadence's Xin Mu explains the PCIe ECN Unordered IO (UIO) feature in the PCIe 6.1 specification, which defines a new wire semantic and related capabilities to enable multiple-path fabric support and helps avoid unnecessary traffic for better bandwidth and latency. Synopsys' Dana Neustadter, Gary Ruggles, and Richard Solomon highlight the latest updates in the CXL 3.1 standard, including new ... » read more

Digital Twins Find Their Footing In IC Manufacturing


Momentum is building for digital twins in semiconductor manufacturing, tying together the various processes and steps to improve efficiency and quality, and to enable more flexibility in the fab and assembly house. The movement toward digital twins opens up a slew of opportunities, from building and equipping new fabs faster to speeding yield ramps by reducing the number of silicon-based tes... » read more

Chip Industry Technical Paper Roundup: June 25


New technical papers recently added to Semiconductor Engineering’s library. [table id=236 /] More ReadingTechnical Paper Library home » read more

Chip Industry Week In Review


BAE Systems and GlobalFoundries are teaming up to strengthen the supply of chips for national security programs, aligning technology roadmaps and collaborating on innovation and manufacturing. Focus areas include advanced packaging, GaN-on-silicon chips, silicon photonics, and advanced technology process development. Onsemi plans to build a $2 billion silicon carbide production plant in the ... » read more

Single Vs. Multi-Patterning Advancements For EUV


As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and technologies. While the basic lithography process hasn’t changed since the founding of the industry — exposing light through a reticle onto a prepared silicon wafer — the techniques and technology ... » read more

Virtual Exploration Of Novel Vertical DRAM Architectures


In this article, we demonstrate a pathfinding technique for a novel Vertical DRAM technology. First, we identify important process parameters (defined by current semiconductor production equipment capabilities) that strongly impact yield. By using a virtual model, we then perform experimental optimization of the Vertical DRAM device across specific target ranges, to help predict and improve the... » read more

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