Study Of Bondable Laser Release Material Using 355nm Energy To Facilitate RDL-First And Die-First Fan-Out Wafer-Level Packaging (FOWLP)


A thorough evaluation on selecting a bondable laser release material for redistribution layer (RDL)-first and die-first fan-out wafer-level packaging (FOWLP) is presented in this article. Four laser release materials were identified based on their absorption coefficient at 355 nm. In addition, all four of these materials possess thermal stability above 350 °C and pull-off adhesion on a Ti/Cu l... » read more

Temporary Bonding: Enabling the Next Generation of Ultrathin Wafers


Innovative materials are critical for maintaining integrity during advanced semiconductor manufacturing processes. Temporary bonding is being enabled by these new materials and is making a name for itself in the next generation of ultrathin wafer manufacturing. Semiconductor wafers are being forced to become thinner as the push to shrink feature sizes and introduce full-scale 3D integration ... » read more