Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design


A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

Gem5 Simulation Environment With Customized RISC-V Instructions for LIM Architectures


A new technical paper titled "Simulation Environment with Customized RISC-V Instructions for Logic-in-Memory Architectures" was published by researchers at National Tsing-Hua University, Politecnico di Torino, University of Rome Tor Vergata, and University of Twente. Abstract "Nowadays, various memory-hungry applications like machine learning algorithms are knocking "the memory wall". Tow... » read more

Framework Based on an RISC-V Microprocessor Supporting LiM Operations


A new technical paper titled "RISC-Vlim, a RISC-V Framework for Logic-in-Memory Architectures" was published by researchers at Politecnico di Torino (Italy), Univerity of Tor Vergata (Italy), and University of Twente (The Netherlands). Abstract: "Most modern CPU architectures are based on the von Neumann principle, where memory and processing units are separate entities. Although processin... » read more

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors


Abstract: "The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindra... » read more