Samsung Electronics announced that it has begun producing the industry’s first 4-gigabyte DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface. The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8-gigabit core dies on top. These are then vertically interconnected by TSV holes and microbumps. A single 8Gb HBM2 die contains over 5,000 T...
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