Impact of Scaling and BEOL Technology Solutions At The 7nm Node On MRAM


A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology. Abstract: "While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting the... » read more

Overview Of Spin-Orbit Torque Vs. Spin-Transfer Torque For MRAM Devices 


A technical paper titled “Perspectives on field-free spin-orbit torque devices for memory and computing applications” was published by researchers at Northwestern University. Abstract: "The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology have created an unprecedented opportunity for engineering computing s... » read more