A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities

Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

Using Digital Image Correlation To Determine BGA Warpage

Digital image correlation (DIC) is a non-contact, full-field displacement, optical measurement technique. It is often used in the following applications: Material characterization Coefficient of thermal expansion (CTE) Glass transition temperature Young’s modulus Poisson’s ratio Sample testing for fatigue and failure In situ monitoring of displacements and str... » read more