We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10 x 10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electroma...
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