中文 English

Impact Of GAA Transistors At 3/2nm


The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need to be fully understood and addressed. GAA FETs are considered an evolutionary step from finFETs, but the impact on design flows and tools is still expected to be significant. GAA FETs will offer... » read more

Advanced IC Packaging Biz Heats Up


After a number of false starts and lackluster adoption, the advanced IC packaging market is finally heating up. On one front, for example, a new wave of chips based on advanced [getkc id="82" kc_name="2.5D"]/[getkc id="42" kc_name="3D"] stacked-die is entering the market. And on another front, the momentum is building for new and advanced 2D packages, such as embedded package-on-package (PoP... » read more

Front End Comes To The Back End


By Jeff Chappell For outsourced assembly and test (OSAT) houses either planning for or already offering through-silicon via (TSV) capability for their 3D packaging efforts, this has meant the front end is coming to the back end, in a manner of speaking. A bit of an exaggeration perhaps, as most generalizations are. But thanks to TSVs, in a very real sense some of what would typically be the... » read more