tag: MIPT

Power/Performance Bits: Jan. 13
By Jesse Allen - 13 Jan, 2020 - Comments: 0

Ferroelectric memory Researchers at the Moscow Institute of Physics and Technology and North Carolina State University developed a ferroelectric memory cell and a method for measuring the electric potential distribution across a ferroelectric capacitor, an important aspect of creating new nonvolatile ferroelectric devices. The team's new ferroelectric memory cell is made from a 10nm thick z... » read more

Manufacturing Bits: Jan. 16
By Mark LaPedus - 16 Jan, 2018 - Comments: 0

Coherent X-ray imaging Russia’s National University of Science and Technology MISIS has developed a non-destructive way to observe the inner structures of photonic crystals. The technology, called ptychographic coherent X-ray imaging, obtains the electron density of colloidal crystals. Ptychography is a lensless, X-ray coherent imaging technique. Others are also working on the techno... » read more

Power/Performance Bits: Oct. 18
By Jesse Allen - 18 Oct, 2016 - Comments: 0

Speeding up memory with T-rays Scientists at the Moscow Institute of Physics and Technology (MIPT), the University of Regensburg in Germany, Radboud University Nijmegen in the Netherlands, and Moscow Technological University proposed a way to improve the performance of memory through using T-waves, or terahertz radiation, as a means of resetting memory cells. This process is several thousand... » read more

Power/Performance Bits: April 19
By Jesse Allen - 19 Apr, 2016 - Comments: 0

Ferroelectric non-volatile memory Scientists from the Moscow Institute of Physics and Technology (MIPT), the University of Nebraska, and the University of Lausanne in Switzerland succeeded in growing ultra-thin (2.5-nanometer) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. The film was g... » read more

Power/Performance Bits: March 22
By Jesse Allen - 22 Mar, 2016 - Comments: 0

Superconducting memory A group of scientists from the Moscow Institute of Physics and Technology and the Moscow State University developed a fundamentally new type of memory cell based on superconductors, which they believe will be able to work hundreds of times faster than memory devices commonly used today. The basic memory cells are based on quantum effects in "sandwiches" of supercond... » read more

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