Full Wafer Inspection for Voltage Contrast Systematic Defects Using High-Throughput Point Scan


Abstract: A next generation system and methodology for high-throughput e-beam hot spot inspection is described. Rather than capturing images of each hot spot, just a single pixel centered on the signal node of each hot spot is collected and used to assess if the hot spot is defective or not. This innovation results in a very substantial savings in time per hot spot, and therefore a tremendous ... » read more