IC Stresses Affect Reliability At Advanced Nodes

Thermal-induced stress is now one of the leading causes of transistor failures, and it is becoming a top focus for chipmakers as more and different kinds of chips and materials are packaged together for safety- and mission-critical applications. The causes of stress are numerous. In heterogeneous packages, it can stem from multiple components composed of different materials. “These materia... » read more

IC Reliability Burden Shifts Left

Chip reliability is coming under much tighter scrutiny as IC-driven systems take on increasingly critical and complex roles. So whether it's a stray alpha particle that flips a memory bit, or some long-dormant software bugs or latent hardware defects that suddenly cause problems, it's now up to the chip industry to prevent these problems in the first place, and solve them when they do arise. ... » read more

Revving Up SiC And GaN

Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

Machine Learning Approach for Fast Electromigration Aware Aging Prediction in Incremental Design of Large Scale On-Chip Power Grid Network

Abstract "With the advancement of technology nodes, Electromigration (EM) signoff has become increasingly difficult, which requires a considerable amount of time for an incremental change in the power grid (PG) network design in a chip. The traditional Black’s empirical equation and Blech’s criterion are still used for EM assessment, which is a time-consuming process. In this article, for ... » read more