Novel Multi-Independent Gate-Controlled FinFET Technology


A new technical paper titled "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)" was published by researchers at Changzhou University. Abstract: "This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific device... » read more