Novel Multi-Independent Gate-Controlled FinFET Technology


A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University.

“This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific devices. An SOI FinFET device consists of three independent gates. By connecting the various gates, multiple working modes are obtained. Compared with traditional FinFETs, the multi-enhanced operation gate fin field-effect transistor in this study combines independent gates by connecting the selection modes; thus, a possible operation can be performed to attain a FinFET with five equivalent working states in only one device. This novel function can enable the device to work with multiple specific voltages and currents by connecting the corresponding gate combinations, augmenting the integrated degrees and shifting the working modes, thereby meeting the different needs of high-speed, low-power, and other potential applications. Further, the potential applications are highlighted.”

Find the technical paper here. Published November 2022.

Wan, H.; Liu, X.; Su, X.; Ren, X.; Luo, S.; Zhou, Q. Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET). Appl. Sci. 2022, 12, 11279. https://doi.org/10.3390/app122111279.

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