tag: SOI

New Architecture Elements For 5G RF Front-End Modules To Reduce Noise, Improve Efficiency, And Allow Multiple Radio Transmitters
By Technical Paper Link - 15 Aug, 2023 - Comments: 0

A technical paper titled “Circuits for 5G RF front-end modules” was published by researchers at Skyworks Solutions Inc. Abstract: "Worldwide adoption of fourth-generation wireless (4G) long-term evolution (LTE) smartphones and the actual transition to fifth-generation wireless (5G) is the main driving engine for semiconductor industry. 5G is expected to reach high data rate speeds (1 Gbps... » read more

How A Highly Controllable SDE Can Be Achieved In A Josephson Junction Where The Normal Section Is A Magnetic Racetrack 
By Technical Paper Link - 15 Aug, 2023 - Comments: 0

A technical paper titled “Josephson transistor from the superconducting diode effect in domain wall and skyrmion magnetic racetracks” was published by researchers at University of Basel. Abstract: "In superconductors, the combination of broken time-reversal and broken inversion symmetries can result in a critical current being dependent on the direction of current flow. This phenomenon is... » read more

Novel Multi-Independent Gate-Controlled FinFET Technology
By Technical Paper Link - 08 Nov, 2022 - Comments: 0

A new technical paper titled "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)" was published by researchers at Changzhou University. Abstract: "This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific device... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)
By Technical Paper Link - 02 Aug, 2022 - Comments: 0

New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Flip-Chip Integration of a GaSb Semiconductor Optical Amplifier with a Silicon Photonic Circuit
By Technical Paper Link - 01 Jul, 2022 - Comments: 0

New research paper titled "Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides" by researchers at Tampere University (Finland). Abstract: "The development of integrated photonics experiences an unprecedented growth dynamic, owing to accelerated penetration to new applications. This leads to new requirements in terms of functional... » read more

Silicon Thermo-Optic Switches with Graphene Heaters Operating at Mid-Infrared Waveband
By Technical Paper Link - 30 Mar, 2022 - Comments: 0

Abstract "The mid-infrared (MIR, 2–20 μm) waveband is of great interest for integrated photonics in many applications such as on-chip spectroscopic chemical sensing, and optical communication. Thermo-optic switches are essential to large-scale integrated photonic circuits at MIR wavebands. However, current technologies require a thick cladding layer, high driving voltages or may introduce h... » read more

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation
By Technical Paper Link - 13 Feb, 2022 - Comments: 0

Abstract: "We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by the double gate structure. We overcome the Debye screening of charged CRP proteins in solutions using antibodies fragments as c... » read more

Thinner Channels With 2D Semiconductors
By Katherine Derbyshire - 21 Jun, 2021 - Comments: 0

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

Upturn Seen For Silicon Wafer Market
By Mark LaPedus - 19 Nov, 2020 - Comments: 0

After a downturn in 2019, the silicon wafer market is expected to rebound in 2020. 2021 looks even better for silicon wafers. Silicon wafers are a fundamental part of the semiconductor business. Every chipmaker needs to buy them in one size or another. Silicon wafer vendors produce and sell bare or raw silicon wafers to chipmakers, who in turn process them into chips. The silicon wafer ma... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates
By Coventor - 17 Jun, 2020 - Comments: 0

Sub-5 nm logic nodes will require an extremely high level of innovation to overcome the inherent real-estate limitations at this increased device density. One approach to increasing device density is to look at the vertical device dimension (z-direction), and stack devices on top of each other instead of conventionally side-by-side. The fabrication of a Complementary-Field Effect Transistor (CF... » read more

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