Front-end patterning and epitaxy approach on Si photonics 220nm SOI substrates

A new technical paper titled "Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator" was published by researchers at Cardiff University and University of Southampton. Abstract "Current heterogeneous Si photonics usually bond III–V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by di... » read more

New Architecture Elements For 5G RF Front-End Modules To Reduce Noise, Improve Efficiency, And Allow Multiple Radio Transmitters

A technical paper titled “Circuits for 5G RF front-end modules” was published by researchers at Skyworks Solutions Inc. Abstract: "Worldwide adoption of fourth-generation wireless (4G) long-term evolution (LTE) smartphones and the actual transition to fifth-generation wireless (5G) is the main driving engine for semiconductor industry. 5G is expected to reach high data rate speeds (1 Gbps... » read more

Novel Multi-Independent Gate-Controlled FinFET Technology

A new technical paper titled "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)" was published by researchers at Changzhou University. Abstract: "This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific device... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)

New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Abstract: "We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by the double gate structure. We overcome the Debye screening of charged CRP proteins in solutions using antibodies fragments as c... » read more

A RISC-V in-network accelerator for flexible high-performance low-power packet processing

Find the technical paper link here. Abstract "The capacity of offloading data and control tasks to the network is becoming increasingly important, especially if we consider the faster growth of network speed when compared to CPU frequencies. In-network compute alleviates the host CPU load by running tasks directly in the network, enabling additional computation/communication overlap and pot... » read more

Thinner Channels With 2D Semiconductors

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options Done By Virtual Fabrication

Four process flow options for Complementary-Field Effect Transistors (C-FET), using different designs and starting substrates (Si bulk, Silicon-On-Insulator, or Double-SOI), were compared to assess the probability of process variation failures. The study was performed using virtual fabrication techniques without requiring fabrication of any actual test wafers. In the study, Nanosheet-on-Nanoshe... » read more

FD-SOI Adoption Expands

Fully depleted silicon-on-insulator (FD-SOI) is gaining ground across a number of new markets, ranging from IoT to automotive to machine learning, and diverging sharply from its original position as a less costly alternative to finFET-based designs. For years, [getkc id="220" kc_name="FD-SOI"] has been viewed as an either/or solution targeted at the same markets as bulk [gettech id="31093" c... » read more

Week In Review: Manufacturing & Design

Don’t look now, but Intel is expanding its foundry business. Previously, Intel garnered a small collection of foundry customers. But Intel would not entertain foundry customers that had competitive products based on ARM chips. Apparently, Intel is having a change of heart. “I think they’ve changed their position,” said Nathan Brookwood, a research fellow at Insight 64. “They will do A... » read more

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