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Novel Multi-Independent Gate-Controlled FinFET Technology


A new technical paper titled "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)" was published by researchers at Changzhou University. Abstract: "This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific device... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)


New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation


Abstract: "We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by the double gate structure. We overcome the Debye screening of charged CRP proteins in solutions using antibodies fragments as c... » read more

A RISC-V in-network accelerator for flexible high-performance low-power packet processing


Find the technical paper link here. Abstract "The capacity of offloading data and control tasks to the network is becoming increasingly important, especially if we consider the faster growth of network speed when compared to CPU frequencies. In-network compute alleviates the host CPU load by running tasks directly in the network, enabling additional computation/communication overlap and pot... » read more

Thinner Channels With 2D Semiconductors


Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options Done By Virtual Fabrication


Four process flow options for Complementary-Field Effect Transistors (C-FET), using different designs and starting substrates (Si bulk, Silicon-On-Insulator, or Double-SOI), were compared to assess the probability of process variation failures. The study was performed using virtual fabrication techniques without requiring fabrication of any actual test wafers. In the study, Nanosheet-on-Nanoshe... » read more

FD-SOI Adoption Expands


Fully depleted silicon-on-insulator (FD-SOI) is gaining ground across a number of new markets, ranging from IoT to automotive to machine learning, and diverging sharply from its original position as a less costly alternative to finFET-based designs. For years, [getkc id="220" kc_name="FD-SOI"] has been viewed as an either/or solution targeted at the same markets as bulk [gettech id="31093" c... » read more

Week In Review: Manufacturing & Design


Don’t look now, but Intel is expanding its foundry business. Previously, Intel garnered a small collection of foundry customers. But Intel would not entertain foundry customers that had competitive products based on ARM chips. Apparently, Intel is having a change of heart. “I think they’ve changed their position,” said Nathan Brookwood, a research fellow at Insight 64. “They will do A... » read more

The Week In Review: Sept. 23


By Mark LaPedus For some time, Apple’s iPhones have incorporated a separate RF switch and diversity switch from Peregrine Semiconductor (PSMI). The switches are based on a silicon-on-insulator (SOI) variant called silicon-on-sapphire (SOS). Murata takes Peregrine’s RF switches and integrates them into a module. Doug Freedman, an analyst with RBC Capital, said Apple is no longer using PSMI... » read more

The Week In Review: Aug. 26


By Mark LaPedus The evolving relationship between humans and machines is the key theme of Gartner’s most "hyped” technologies in 2013. Gartner has chosen to feature the relationship between humans and machines due to the increased hype around smart machines, cognitive computing and the Internet of Things. Gartner also released its updated chart of hyped technologies. SunEdison, formerly... » read more

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