Author's Latest Posts


Advances In 3D CMOS Image Sensors Optical Modeling: Combining Realistic Morphologies With FDTD


This paper describes an innovative methodology to investigate the relationship between device morphology and the optical performance of CMOS image sensors. By coupling a FDTD-based 3D Maxwell solver with silicon-accurate process modeling software, we have been able to analyze the sensitivity of image sensor quantum efficiency with respect to statistical variations in nm-scale device topology. A... » read more

Influence Of SiGe On Parasitic Parameters in PMOS


In this paper, simulation-based design-technology co-optimization (DTCO) is carried out using the Coventor SEMulator3D virtual fabrication platform with its integrated electrical analysis capabilities [1]. In our study, process modeling is used to predict the sensitivity of FinFET device performance to changes in a silicon germanium epitaxial process. The simulated process is a gate-last flow p... » read more

Effects Of A Random Process Variation On The Transfer Characteristics Of A Fundamental Photonic Integrated Circuit Component


Silicon photonics is rapidly emerging as a promising technology to enable higher bandwidth, lower energy, and lower latency communication and information processing, and other applications. In silicon photonics, existing CMOS manufacturing infrastructure and techniques are leveraged. However, a key challenge for silicon photonics is the lack of mature models that take into account known CMOS pr... » read more

Backside Power Delivery as a Scaling Knob for Future Systems


Standard cell track height scaling provides us with sufficient area scaling at the standard cell library level. The efficiency of this technique and the complexities involved with this scaling method have been discussed in detail. However, the area benefits of standard cell track height scaling diminish when we consider the complexities of incorporating on-chip power grid into the DTCO explorat... » read more

Process Modeling Exploration for 8 nm Half-Pitch Interconnects


In this paper, we simulate eSADP, eSAQP and iSAOP patterning options to enable fabrication of 8 nm Half-Pitch (HP) interconnects. We investigate the impact of process variations and patterning sensitivities on pitch walking and resistance performance. The overall yield is also calculated for eight line CDs as well as M2-via-M1 via segment resistance and compared for all options. Process sensiti... » read more

New Advancements in Using Statistical Models as Part of a Standard MEMS Design Flow


This paper presents the benefits of using statistical models during MEMS design, through the virtual reproduction of a test structure for measuring a beam’s pull-in voltage. This electrical measurement is used as a functional indicator of the process quality for manufactured wafers. Statistical variations of process parameters (material properties, silicon thickness, sidewall angle and edge s... » read more

Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond


In 5nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24nm. Fin depopulation is mandatory to enable area scaling, but it becomes challenging at small pitches. In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and pr... » read more

Virtual Fabrication And Advanced Process Control Improve Yield For SAQP Process Assessment With 16nm Half-Pitch


This paper uses Virtual Fabrication to assess the Imec 7nm node (iN7) Self-Aligned Quadruple Patterning (SAQP) integration scheme for the 16nm half-pitch Metal 2 line formation. We first present the technical challenge of obtaining defect-free M2 lines with SAQP, and then provide a solution to achieve a » read more

Everything You Need to Know about FDSOI Technology


Over the past decades, transistor feature size has continuously decreased, leading to an increase in performance and a reduction in power consumption. Consumers have reaped the benefits, with superior electronic devices that have become increasingly useful, valuable, faster and more efficient. In recent years, as transistor feature size has shrunk below 10nm, it has become progressively more di... » read more

Innovative Solutions To Increase 3D NAND Flash Memory Density


In the last 10 years, 3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND structures, due to the relative ease of 3D integration, even when fabricated on later generation technology nodes. 3D NAND structures contain vertical channels which orthogo... » read more

← Older posts