Author's Latest Posts


A Study Of Wiggling AA Modeling And Its Impact On Device Performance In Advanced DRAM


In this paper, a wiggling active area (fin) in an advanced 1x DRAM process was analyzed and modeled using the pattern-dependent etch simulation capabilities of the SEMulator3D semiconductor modeling software. Nonuniformity in sidewall passivation caused by hard mask pattern density loading was identified as the root cause of the wiggling profile. The calibrated model mimicked these phenomena, g... » read more

Impact Of EUV Resist Thickness On Local Critical Dimension Uniformities For <30nm CD Via Patterning


This paper describes the impact of extreme ultraviolet (EUV) resist thickness on <30 nm via local critical dimension uniformity (LCDU) measured during after development inspection (ADI) and after etch inspection (AEI). For the same post-etch CD targets, increasing resist thickness from 40 to 60 nm helped reduced CD variability. This work was performed via virtual fabrication using Coventor... » read more

Process Model Calibration: Building Predictive And Accurate 3D Process Models


The semiconductor industry has always faced challenges caused by device scaling, architecture evolution and process complexity and integration. These challenges are coupled with a need to provide new technology to the market quickly. In the initial stages of semiconductor technology development, innovative process flow schemes must be tested using silicon test wafers. These wafer tests are leng... » read more

Process Model Calibration: Building Predictive and Accurate 3D Process Models


The semiconductor industry has always faced challenges caused by device scaling, architecture evolution and process complexity and integration. These challenges are coupled with a need to provide new technology to the market quickly. In the initial stages of semiconductor technology development, innovative process flow schemes must be tested using silicon test wafers. These wafer tests are leng... » read more

Speeding Up Process Optimization With Virtual Processing


Advanced CMOS scaling and new memory technologies have introduced increasingly complex structures into the device manufacturing process. For example, the increase in NAND memory layers has achieved greater vertical NAND scaling and higher memory density, but has led to challenges in high aspect ratio etch patterning and foot print scaling issues. Unique integration and patterning schemes have b... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates


Sub-5 nm logic nodes will require an extremely high level of innovation to overcome the inherent real-estate limitations at this increased device density. One approach to increasing device density is to look at the vertical device dimension (z-direction), and stack devices on top of each other instead of conventionally side-by-side. The fabrication of a Complementary-Field Effect Transistor (CF... » read more

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options Done By Virtual Fabrication


Four process flow options for Complementary-Field Effect Transistors (C-FET), using different designs and starting substrates (Si bulk, Silicon-On-Insulator, or Double-SOI), were compared to assess the probability of process variation failures. The study was performed using virtual fabrication techniques without requiring fabrication of any actual test wafers. In the study, Nanosheet-on-Nanoshe... » read more

Defect Evolution In Next Generation, Extreme Ultraviolet Lithography


Extreme ultraviolet (EUV) lithography is a promising next generation lithography technology that may succeed optical lithography at future technology nodes. EUV mask infrastructure and manufacturing of defect-free EUV mask blanks is a key near term challenge in the use of EUV lithography. Virtual fabrication is a computerized technique to perform predictive, three dimensional modeling of sem... » read more

Speeding Up Process Optimization Using Virtual Fabrication


Author: Joseph Ervin Director, Semiconductor Process and Integration Lam Research Advanced CMOS scaling and new memory technologies have introduced increasingly complex structures into the device manufacturing process. For example, the increase in NAND memory layers has achieved greater vertical NAND scaling and higher memory density, but has led to challenges in high aspect ratio etch patte... » read more

N7 FinFET Self-Aligned Quadruple Patterning Modeling


In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning process steps is assessed. Etch sensitivity to pattern density is reproduced in the model and provides insight on ... » read more

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