Author's Latest Posts

Innovative Solutions To Increase 3D NAND Flash Memory Density

In the last 10 years, 3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND structures, due to the relative ease of 3D integration, even when fabricated on later generation technology nodes. 3D NAND structures contain vertical channels which orthogo... » read more

Effects of a Random Process Variation on the Transfer Characteristics of a Fundamental Photonic Integrated Circuit Component

Silicon photonics is rapidly emerging as a promising technology to enable higher bandwidth, lower energy, and lower latency communication and information processing, and other applications. In silicon photonics, existing CMOS manufacturing infrastructure and techniques are leveraged. However, a key challenge for silicon photonics is the lack of mature models that take into account known CMOS pr... » read more

N7 FinFET Self-Aligned Quadruple Patterning Modeling

Authors: Sylvain Baudot, Sofiane Guissi, Alexey P. Milenin, Joseph Ervin, Tom Schram (IMEC and COVENTOR) In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning proces... » read more

CMOS Area Scaling And The Need For High Aspect Ratio Vias

Resolving internal routing congestion will be essential to enable CMOS area scaling to the N5 node and beyond. The solution will require new design maneuvers in place and route (PnR), as well as patterning innovations. In this work, we present inter-layer high aspect ratio vias or ‘SuperVia’ (SV) as one technology element that could enable track height scaling to 4.5T at aggressive N5 dime... » read more

Everything You Need to Know about FDSOI Technology

Over the past decades, transistor feature size has continuously decreased, leading to an increase in performance and a reduction in power consumption. Consumers have reaped the benefits, with superior electronic devices that have become increasingly useful, valuable, faster and more efficient. In recent years, as transistor feature size has shrunk below 10nm, it has become progressively more di... » read more

Understanding The Effect Of Variability In Bulk FinFET Device Performance

2-D MOSFETs have proven difficult to scale down to 20nm and beyond. In their place, 3D FinFET transistors have emerged as novel devices that can scale down to lower node sizes. 10nm process finFETs are for SoC product mass production, and research is progressing towards a 7nm process finFET. FinFET transistors provide lower dynamic power consumption (due to flatter I-V curves), improved control... » read more

Modeling Semiconductor Process Variation

3D semiconductors, 3D NAND Flash, FinFETS and other advanced devices are bringing tremendous opportunities to the semiconductor industry. Unfortunately, these devices are also bringing new design, process and production problems. Process variability has been a major contributor to production delays as feature sizes have decreased and process complexity has increased. Virtual fabrication is a co... » read more

Self-Aligned Block And Fully Self-Aligned Via For iN5 Metal 2 Self-Aligned Quadruple Patterning

This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, co... » read more

Understanding How Small Variations In Photoresist Shape Significantly Impact Multi-Patterning Yield

Multi-patterning schemes such as Self-Aligned Double Patterning (SADP) and Self-Aligned Quadruple Patterning (SAQP) have been used to successfully increase semiconductor device density, circumventing prior physical limits in pattern density. However, the number of processing steps needed in these patterning schemes can make it difficult to directly translate a lithographic mask pattern to a fin... » read more

Optimizing DRAM Development Using Directed Self-Assembly (DSA)

Directed Self-Assembly (DSA) is an emerging technology that has the ability to substantially improve lithographic manufacturing of semiconductor devices. In DSA, copolymer materials self-assemble to form nanoscale resolution patterns on the semiconductor substrate. DSA technologies hold the promise to substantially improve the resolution of existing lithographic processes (such as self-aligned ... » read more

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