STI recess with an optimal trenching profile can increase on-state current and reduce off-state leakage.
In this paper, a 5nm FinFET flow was built using the SEMulator3D virtual fabrication platform. Different STI (shallow trench isolation) recess profiles were investigated using the pattern-dependent etch capabilities of SEMulator3D, including changes in trenching/footing profile, fin height and imbalance fin height. The impact of STI recess profile on device performance was then investigated using a built-in drift-diffusion solver. Our analysis has confirmed that larger footings, lower fin heights and larger imbalance fin heights will generate more severe DIBL problems and lead to higher off-state leakage. STI recess with an optimal trenching profile can increase on-state current and reduce off-state leakage.
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FINFET….
WRITE.( QUANTUM TUNNELLING )… SIGNAL ATTENUATION / MEMORY WEAKEN & POWER LOSS ( SUBSTRATE TO CHARGE TRAP. SOME OF THE SIGNAL MAY TRAVEL TO THE GATE DUE TO HIGHER +VE CHARGE. @ NEUTRALISE BY PHOTON.
READ….. NOT ACTUAL SIGNAL ( HUMAN ESD-TOUCHING SSD MEMORY CONDUCTING PART & ATMOSPHERIC CHARGE, )