Single Vs. Multi-Patterning EUV


Extreme ultraviolet (EUV) lithography finally is moving into production, but foundry customers now must decide whether to implement their designs using EUV-based single patterning at 7nm, or whether to wait and instead deploy EUV multiple patterning at 5nm. Each patterning scheme has unique challenges, making that decision more difficult than it might appear. Targeted for 7nm, single pattern... » read more

Unsticking Moore’s Law


Sanjay Natarajan, corporate vice president at Applied Materials with responsibility for transistor, interconnect and memory solutions, sat down with Semiconductor Engineering to talk about variation, Moore's Law, the impact of new materials such as cobalt, and different memory architectures and approaches. What follows are excerpts of that conversation. SE: Reliability is becoming more of an... » read more

Planarization Challenges At 7nm And Beyond


Dan Sullivan, executive director of semiconductor technology at Brewer Science, digs into the challenges of planarizing a thin film on a wafer for etch and optical control. The problem becomes more difficult at advanced nodes because the films are thinner. https://youtu.be/iNA6EGpoYZU     _________________________________ See more tech talk videos here   » read more

Digging Deep Into High Aspect Ratio Process Control For Memory Technology


By Mark Shirey and Janay Camp Data is an integral part of our lives. Contrary to the past, where files had to be removed periodically to free up storage space, we now assume that our data will never be deleted. Why risk deleting the wrong file? Just keep them! This new approach consumes a lot of memory, and intensifies the demand for storage. Two of the main workhorses of the memory segment ... » read more

Cryogenic Etch Re-Emerges


After years in R&D, a technology called cryogenic etch is re-emerging as a possible option for production as the industry faces new challenges in memory and logic. Cryogenic etch removes materials in devices with high aspect ratios at cold temperatures, although it has always been a challenging process. Cryogenic etch is difficult to control and it requires specialized cryogenic gases in... » read more

Variation’s Long, Twisty Tail Worsens At 7/5nm


Variation is becoming a bigger challenge at each new node, but not just for obvious reasons and not always from the usual sources. Nevertheless, dealing with these issues takes additional time and resources, and it can affect the performance and reliability of those chips throughout their lifetimes. At a high level, variation historically was viewed as a mismatch between what design teams in... » read more

Where Is Selective Deposition?


For years, the industry has been working on an advanced technology called area-selective deposition for chip production at 5nm and beyond. Area-selective deposition, an advanced self-aligned patterning technique, is still in R&D amid a slew of challenges with the technology. But the more advanced forms of technology are beginning to make some progress, possibly inching closer from the la... » read more

Etch Techniques for Next-Generation Storage-Class Memory


Chipmakers make abundant use of two very different functional classes of memory in their products. For operational use (main/primary memory) where speed is critical, DRAM and SRAM are employed, whereas for long-term storage, flash memory – in particular NAND – provides the high capacity at low cost needed. For both classes, efforts to improve speed, capacity, and power usage are ongoing. To... » read more

RF SOI Wars Begin


Several foundries are expanding their fab capacities for RF SOI processes amid huge demand and shortages of this technology for smartphones. A number of foundries are increasing their 200mm RF SOI fab capacities to meet soaring demand. Then, GlobalFoundries, TowerJazz, TSMC and UMC are expanding or bringing up RF SOI processes in 300mm fabs in an apparent race to garner the first wave of RF ... » read more

New Patterning Options Emerging


Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

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