Single Vs. Multi-Patterning Advancements For EUV


As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and technologies. While the basic lithography process hasn’t changed since the founding of the industry — exposing light through a reticle onto a prepared silicon wafer — the techniques and technology ... » read more

Understanding CFETs, A Next Generation Transistor Architecture


Computing power has experienced exponential growth over the last 70 years. This has largely been achieved through transistor scaling. Due to a continuous reduction in the size of transistors, engineers have been able to pack more and more of them onto a single chip [1]. This has led to faster, more powerful, and more energy-efficient devices. Improvements in fabrication processes and materials,... » read more

Semiconductor Device Manufacturing Process Challenges And Opportunities


Semiconductor device manufacturing involves a complex series of processes that transform raw materials into finished devices. The process typically involves four major stages: wafer fabrication, wafer testing, assembly or packaging, and final testing. Each stage has its own unique set of challenges and opportunities. The semiconductor device manufacturing process faces several challenges, inclu... » read more

When And Where To Implement AI/ML In Fabs


Deciphering complex interactions between variables is where machine learning and deep learning shine, but figuring out exactly how ML-based systems will be most useful is the job of engineers. The challenge is in pairing their domain expertise with available ML tools to maximize the value of both. This depends on sufficient quantities of good data, highly optimized algorithms, and proper tra... » read more

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration


As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar transistor architectures toward 3D devices. Gate-all-around (GAA) architectures are an example of this type of 3D device [2]. In a GAA transistor, the gate oxide surrounds the channel in all directions.... » read more

Etch Processes Push Toward Higher Selectivity, Cost Control


Plasma etching is perhaps the most essential process in semiconductor manufacturing, and possibly the most complex of all fab operations next to photolithography. Nearly half of all fab steps rely on a plasma, an energetic ionized gas, to do their work. Despite ever-shrinking transistor and memory cells, engineers continue to deliver reliable etch processes. “To sustainably create chips... » read more

How Metrology Tools Stack Up In 3D NAND Devices


Multiple innovations in semiconductor processing are needed to enable 3D NAND bit density increases of about 30% per year at ever-decreasing cost per bit, all of which will be required to meet the nonvolatile storage needs of the big data era. 3D NAND is the first truly three-dimensional device in production. It is both a technology driver for new metrology methods and a significant part of ... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines


Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

Research Bits: April 4


Wet-like plasma etching Researchers from Nagoya University and Hitachi developed a new etch method called wet-like plasma etching that combines the selectivity of wet etching with the controllability of dry etching. The researchers say the technique will make it possible to etch complex structures such as metal carbides consisting of titanium (Ti) and aluminum (Al), such as TiC or TiAlC, wh... » read more

Process Innovations Enabling Next-Gen SoCs and Memories


Achieving improvements in performance in advanced SoCs and packages — those used in mobile applications, data centers, and AI — will require complex and potentially costly changes in architectures, materials, and core manufacturing processes. Among the options under consideration are new compute architectures, different materials, including thinner barrier layers and those with higher th... » read more

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