Week In Review: Manufacturing, Test


Chipmakers Here comes the battle between 5nm and 6nm processes at two foundry vendors—Samsung and TSMC. Meanwhile, Intel is behind and scrambling to get 10nm out the door. (Intel's 10nm is equivalent to 7nm from the foundries.) Last week, TSMC announced delivery of a complete version of its 5nm design infrastructure. TSMC’s 5nm technology is based on a finFET. This week, Samsung anno... » read more

Self-aligned Fin Cut Last Patterning Scheme for Fin Arrays of 24nm Pitch and Beyond


In 5nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24nm. Fin depopulation is mandatory to enable area scaling, but it becomes challenging at small pitches. In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and pr... » read more