The Impact Of EUV Resist Thickness On Via Patterning Uniformity


Via patterning at advanced nodes requires extremely low critical dimension (CD) values, typically below 30nm. Controlling these dimensions is a serious challenge, since there are many inherent sources of variation during lithography and etch processing. Coventor personnel, in conjunction with our colleagues from ASML and imec, recently looked at the impact of Extreme Ultraviolet lithography (EU... » read more

Improving EUV Process Efficiency


The semiconductor industry is rethinking the manufacturing flow for extreme ultraviolet (EUV) lithography in an effort to improve the overall process and reduce waste in the fab. Vendors currently are developing new and potentially breakthrough fab materials and equipment. Those technologies are still in R&D and have yet to be proven. But if they work as planned, they could boost the flo... » read more

Defect Evolution In Next Generation, Extreme Ultraviolet Lithography


Extreme ultraviolet (EUV) lithography is a promising next generation lithography technology that may succeed optical lithography at future technology nodes. EUV mask infrastructure and manufacturing of defect-free EUV mask blanks is a key near term challenge in the use of EUV lithography. Virtual fabrication is a computerized technique to perform predictive, three dimensional modeling of sem... » read more

The Next Technology Frontier In MEMS Gyroscopes


In MEMS technology development, it is always exciting to see the next technology frontier, the border of the known and the unknown. Talent and hard work (along with ingenuity) can move this frontier and enrich all of us. We respect the efforts of MEMS innovators, who have developed original and creative ideas by building upon past knowledge and wisdom and have integrated this knowledge across m... » read more

Identifying DRAM Failures Caused By Leakage Current And Parasitic Capacitance


Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even when there are no obvious structural abnormalities in the underlying device. Leakage current has become a critically important component in DRAM device design. Fig. 1 (a) DRAM Memory Cell, (b) GI... » read more

Speeding Up Process Optimization Using Virtual Fabrication


Author: Joseph Ervin Director, Semiconductor Process and Integration Lam Research Advanced CMOS scaling and new memory technologies have introduced increasingly complex structures into the device manufacturing process. For example, the increase in NAND memory layers has achieved greater vertical NAND scaling and higher memory density, but has led to challenges in high aspect ratio etch patte... » read more

Week In Review: Manufacturing, Test


Chipmakers A fire broke out this week at a joint NAND flash fab between Western Digital (WD) and Kioxia. Kioxia is the former Toshiba NAND flash unit that was recently spun out by the Japanese company. “On Monday, January 6, (morning, January 7 local time) a small fire occurred at one of our joint venture facilities in Yokkaichi, Japan. Local firefighters quickly extinguished the fire, and w... » read more

An Introduction To Semiconductor Process Modeling


Semiconductor process engineers would love to develop successful process recipes without the guesswork of repeated wafer testing. Unfortunately, developing a successful process can’t be done without some work. This blog will discuss an efficient technique to develop new process steps faster, with much less effort. Basic concept The easiest way to predict a process result is to model its b... » read more

N7 FinFET Self-Aligned Quadruple Patterning Modeling


In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning process steps is assessed. Etch sensitivity to pattern density is reproduced in the model and provides insight on ... » read more

A Study Of Next-Generation CFET Process Integration Options


Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more

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