Influence Of SiGe On Parasitic Parameters in PMOS


In this paper, simulation-based design-technology co-optimization (DTCO) is carried out using the Coventor SEMulator3D virtual fabrication platform with its integrated electrical analysis capabilities [1]. In our study, process modeling is used to predict the sensitivity of FinFET device performance to changes in a silicon germanium epitaxial process. The simulated process is a gate-last flow p... » read more

How FinFET Device Performance Is Affected By Epitaxial Process Variations


By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Effects Of A Random Process Variation On The Transfer Characteristics Of A Fundamental Photonic Integrated Circuit Component


Silicon photonics is rapidly emerging as a promising technology to enable higher bandwidth, lower energy, and lower latency communication and information processing, and other applications. In silicon photonics, existing CMOS manufacturing infrastructure and techniques are leveraged. However, a key challenge for silicon photonics is the lack of mature models that take into account known CMOS pr... » read more

Advanced Patterning Techniques For 3D NAND Devices


By Yu De Chen and Jacky Huang Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance [1]. In NAND Flash technologies, this has led to the market dominance of 3D structures instead of 2D planar devices. Device density can be linearly increased by increasing stack layer counts in a 3D NAND device [2]. At th... » read more

Backside Power Delivery as a Scaling Knob for Future Systems


Standard cell track height scaling provides us with sufficient area scaling at the standard cell library level. The efficiency of this technique and the complexities involved with this scaling method have been discussed in detail. However, the area benefits of standard cell track height scaling diminish when we consider the complexities of incorporating on-chip power grid into the DTCO explorat... » read more

Process Window Optimization


David Fried, vice president of computational products at Lam Research, examines increasing process variation and interactions between various types of variation, why different approaches are necessary to improve yield and continue scaling. » read more

Node Within A Node


Enough margin exists in manufacturing processes to carve out the equivalent of a full node of scaling, but shrinking that margin will require a collective push across the entire semiconductor manufacturing supply chain. Margin is built into manufacturing at various stages to ensure that chips are manufacturable and yield sufficiently. It can include everything from variation in how lines are... » read more

Process Modeling Exploration for 8 nm Half-Pitch Interconnects


In this paper, we simulate eSADP, eSAQP and iSAOP patterning options to enable fabrication of 8 nm Half-Pitch (HP) interconnects. We investigate the impact of process variations and patterning sensitivities on pitch walking and resistance performance. The overall yield is also calculated for eight line CDs as well as M2-via-M1 via segment resistance and compared for all options. Process sensiti... » read more

Week In Review: Manufacturing, Test


Semi takeover targets Semiconductor M&A activity is heating up again. So who is next? “Within our coverage universe, we believe AMBA (Ambarella) and SLAB (Silicon Labs) represent the most likely targets moving forward,” according to KeyBanc in a research note. KeyBanc also listed some other “M&A Combinations That Could Make Sense.” Some of these combos make sense, while othe... » read more

Manufacturing Bits: July 10


Semicon West It’s Semicon West time again. Here’s the first wave of announcements at the event: Applied Materials has unveiled a pair of tools aimed at accelerating the industry adoption for new memories. First, Applied rolled out the Endura Clover MRAM PVD system. The system is an integrated platform for MRAM devices. Second, the company introduced the Endura Impulse PVD platform for P... » read more

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