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Evaluating The Impact Of STI Recess Profile Control On Advanced FinFET Device Performance


In this paper, a 5nm FinFET flow was built using the SEMulator3D virtual fabrication platform. Different STI (shallow trench isolation) recess profiles were investigated using the pattern-dependent etch capabilities of SEMulator3D, including changes in trenching/footing profile, fin height and imbalance fin height. The impact of STI recess profile on device performance was then investigated usi... » read more

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics


Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more