An analysis used to obtain a quantified process window comparison between the SADP and SAQP patterning schemes.
In advanced DRAM, capacitors with closely packed patterning are designed to increase cell density. Thus, advanced patterning schemes, such as multiple litho-etch, SADP and SAQP processes may be needed. In this paper, we systematically evaluate a DRAM capacitor hole formation process that includes SADP and SAQP patterning, using virtual fabrication and statistical analysis in SEMulator3D. The purpose of this analysis is to obtain a quantified process window comparison between the SADP and SAQP patterning schemes.
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