N7 FinFET Self-Aligned Quadruple Patterning Modeling


Authors: Sylvain Baudot, Sofiane Guissi, Alexey P. Milenin, Joseph Ervin, Tom Schram (IMEC and COVENTOR) In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning proces... » read more

FD-SOI Going Mainstream


Semiconductor Engineering sat down to discuss changes in the FD-SOI world and what's behind them, with James Lamb, deputy CTO for advanced semiconductor manufacturing and corporate technical fellow at Brewer Science; Giorgio Cesana, director of technical marketing at STMicroelectronics; Olivier Vatel, senior vice president and CTO at Screen Semiconductor Solutions; and Carlos Mazure, CTO at Soi... » read more

Dealing With Resistance In Chips


Chipmakers continue to scale the transistor at advanced nodes, but they are struggling to maintain the same pace with the other two critical parts of the device—the contacts and interconnects. That’s beginning to change, however. In fact, at 10nm/7nm, chipmakers are introducing new topologies and materials such as cobalt, which promises to boost the performance and reduce unwanted resist... » read more

New Patterning Options Emerging


Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

More Lithography/Mask Challenges (Part 2)


Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; Regina Freed, managing director of patterning technology at [getentity id="... » read more

Self-Aligned Block And Fully Self-Aligned Via For iN5 Metal 2 Self-Aligned Quadruple Patterning


This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, co... » read more

Improving Patterning Yield At The 5nm Semiconductor Node


Engineering decisions are always data-driven. As scientists, we only believe in facts and not in intuition or feelings. At the manufacturing stage, the semiconductor industry is eager to provide data and facts to engineers based upon metrics such as the quantity of wafers produced per hour and sites/devices tested on each of those wafers. The massive quantity of data generated in semiconduct... » read more

DSA Re-Enters Litho Picture


By Mark LaPedus and Ed Sperling Directed self-assembly (DSA) is moving back onto the patterning radar screen amid ongoing challenges in lithography. Intel continues to have a keen interest in [gettech id="31046" t_name="DSA"], while other chipmakers are taking another hard look at the technology, according to multiple industry sources. DSA isn't like a traditional [getkc id="80" kc_name="... » read more

Executive Insight: Wally Rhines (March 2018)


Wally Rhines, president and CEO of [getentity id="22017" e_name="Mentor, a Siemens Business"], sat down with Semiconductor Engineering to discuss a wide range of industry and technology changes and how that will play out over the next few years. What follows are excerpts of that conversation. SE: What will happen in the end markets? Rhines: The end markets are perhaps more exciting from a... » read more

Foundry Challenges in 2018


The silicon foundry business is expected to see steady growth in 2018, but that growth will come with several challenges. On the leading edge, GlobalFoundries, Intel, Samsung and TSMC are migrating from the 16nm/14nm to the 10nm/7nm logic nodes. Intel already has encountered some difficulties, as the chip giant recently pushed out the volume ramp of its new 10nm process from the second half ... » read more

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