Single Vs. Multi-Patterning Advancements For EUV

By Gregory Haley - 20 Jun, 2024 - Comments: 0

As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and technologies. While the basic lithography process hasn’t changed since the founding of the industry — exposing light through a reticle onto a prepared silicon wafer — the techniques and technology ... » read more

Impacts Of Process Flow, Scaling, And Variability On Interconnect Performance

By Lam Research - 26 Apr, 2023 - Comments: 0

Virtual fabrication is used to evaluate the performance of interconnects (line and via resistance, capacitance, etc.) across pitches compatible with either EUV single exposure or SADP for three different process flows: single damascene, dual damascene, and semi-damascene (subtractive metal etch). The effects of process variation for the three flows are also investigated to determine the relativ... » read more

Pathfinding By Process Window Modeling: Advanced DRAM Capacitor Patterning Process Window Evaluation Using Virtual Fabrication

By Coventor - 14 Dec, 2022 - Comments: 0

In advanced DRAM, capacitors with closely packed patterning are designed to increase cell density. Thus, advanced patterning schemes, such as multiple litho-etch, SADP and SAQP processes may be needed. In this paper, we systematically evaluate a DRAM capacitor hole formation process that includes SADP and SAQP patterning, using virtual fabrication and statistical analysis in SEMulator3D. The pu... » read more

Insights Into Advanced DRAM Capacitor Patterning: Process Window Evaluation Using Virtual Fabrication

By Qingpeng Wang - 20 Oct, 2022 - Comments: 0

With continuous device scaling, process windows have become narrower and narrower due to smaller feature sizes and greater process step variability [1]. A key task during the R&D stage of semiconductor development is to choose a good integration scheme with a relatively large process window. When wafer test data is limited, evaluating the process window for different integration schemes can... » read more

High-Temperature Stable Spin-On Carbon Materials For Advanced Pattern Transfer Applications

By Brewer Science - 16 Jun, 2022 - Comments: 0

In recent years a strong demand has arisen for spin-on carbon (SOC) materials compatible with high-temperature processes. This requirement is to enable usage of high-temperature SOC (HTSOC) materials in integration schemes utilizing chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) processes. In addition to compatibility with the high-temperature deposition processes, planari... » read more

Manufacturing Bits: March 8

By Mark LaPedus - 08 Mar, 2021 - Comments: 0

Two-beam EUV lithography At the recent SPIE Advanced Lithography conference, Nikon gave a presentation on a two-beam extreme ultraviolet (EUV) lithography technology. Still in the conceptual phase, Nikon’s so-called EUV Projection Optical Wafer Exposure Ruling Machine, or EUV Power Machine, is designed for the 1nm node or so. The proposed system has a minimum resolution of 10nm for lines ... » read more

Metrology Challenges For Gate-All-Around

By Mark LaPedus - 16 Apr, 2020 - Comments: 3

Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

DRAM Scaling Challenges Grow

By Mark LaPedus - 21 Nov, 2019 - Comments: 5

DRAM makers are pushing into the next phase of scaling, but they are facing several challenges as the memory technology approaches its physical limit. DRAM is used for main memory in systems, and today’s most advanced devices are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere around 10nm. There are efforts in R&D to extend the technology, and ultimate... » read more

Lithography Options For Next-Gen Devices

By Mark LaPedus - 18 Apr, 2019 - Comments: 2

Chipmakers are ramping up extreme ultraviolet (EUV) lithography for advanced logic at 7nm and/or 5nm, but EUV isn’t the only lithographic option on the table. For some time, the industry has been working on an assortment of other next-generation lithography technologies, including a new version of EUV. Each technology is different and aimed at different applications. Some are here today, w... » read more

FD-SOI Going Mainstream

By Ed Sperling - 19 Jul, 2018 - Comments: 0

Semiconductor Engineering sat down to discuss changes in the FD-SOI world and what's behind them, with James Lamb, deputy CTO for advanced semiconductor manufacturing and corporate technical fellow at Brewer Science; Giorgio Cesana, director of technical marketing at STMicroelectronics; Olivier Vatel, senior vice president and CTO at Screen Semiconductor Solutions; and Carlos Mazure, CTO at Soi... » read more

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