A successful development of pattern transfer process using Brewer Science’s HTSOC with EUV lithography. HTSOC can be used as a mandrel in self-aligned double patterning (SADP) utilizing high-temperature CVD deposition of the spacer.
In recent years a strong demand has arisen for spin-on carbon (SOC) materials compatible with high-temperature processes. This requirement is to enable usage of high-temperature SOC (HTSOC) materials in integration schemes utilizing chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) processes. In addition to compatibility with the high-temperature deposition processes, planarization requirements and/or chemical-mechanical polishing compatibility are often critical. To answer these new challenging requirements, we have developed a family of HTSOC materials that fulfills these critical needs. In this paper we present a successful development of pattern transfer process using our HTSOC with EUV lithography. We also present the capability of the HTSOC to be used as a mandrel in self-aligned double patterning (SADP) utilizing high-temperature CVD deposition of the spacer. The properties of the next-generation HTSOC materials that enable these processes will be discussed in detail and compared to previous HTSOCs material, conventional low-temperature SOCs, as well as amorphous carbon (aC).
Authors: Jakub Koza, Caroline Evans, Runhui Huang, Jamie Storie, Vandana Krishnamurthy, Douglas Guerrero, all of Brewer Science Inc (United States)
Click here to access the article on SPIE.
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