Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD


A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more

Characteristics of Three-Gated Reconfigurable FETs


A new technical paper titled "Insights into the Temperature Dependent Switching Behaviour of Three-Gated Reconfigurable Field Effect Transistors" was published by researchers at NaMLAB and TU Dresden. "In this work, it is possible to assess the performances of Three-Gated Reconfigurable Field Effect Transistors within a considerable temperature span and finally provide significant insights o... » read more

High-Temperature Stable Spin-On Carbon Materials For Advanced Pattern Transfer Applications


In recent years a strong demand has arisen for spin-on carbon (SOC) materials compatible with high-temperature processes. This requirement is to enable usage of high-temperature SOC (HTSOC) materials in integration schemes utilizing chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) processes. In addition to compatibility with the high-temperature deposition processes, planari... » read more

High-Temperature-Stable, Spin-On Carbon Materials For High-Aspect-Ratio Gap-Fill Applications


Brewer Science, Inc. has developed a class of novel, high-temperature-stable spin-on carbon (SOC)-based materials with excellent processability. These SOCs are cured under mild conditions and have flow properties that enable the fill of high-aspect-ratio vias in a void-free manner. Moreover, this new class of SOCs has remarkable thermal stability and can survive temperatures of up to 550°C wit... » read more

Power/Performance Bits: Jan. 2


High-temp electronics Researchers at Purdue University, UC Santa Cruz, and Stanford developed a semiconducting plastic capable of operating at extreme temperatures. The new material, which combines both a semiconducting organic polymer and a conventional insulating organic polymer could reliably conduct electricity in up to 220 degrees Celsius (428 F). "One of the plastics transports the ch... » read more