High-Temperature Stable Spin-On Carbon Materials For Advanced Pattern Transfer Applications


In recent years a strong demand has arisen for spin-on carbon (SOC) materials compatible with high-temperature processes. This requirement is to enable usage of high-temperature SOC (HTSOC) materials in integration schemes utilizing chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) processes. In addition to compatibility with the high-temperature deposition processes, planari... » read more

High-Temperature-Stable, Spin-On Carbon Materials For High-Aspect-Ratio Gap-Fill Applications


Brewer Science, Inc. has developed a class of novel, high-temperature-stable spin-on carbon (SOC)-based materials with excellent processability. These SOCs are cured under mild conditions and have flow properties that enable the fill of high-aspect-ratio vias in a void-free manner. Moreover, this new class of SOCs has remarkable thermal stability and can survive temperatures of up to 550°C wit... » read more

Development Of Planarizing Spin-On Carbon Materials For High-Temperature Processes


Multilayer lithography is used for advanced semiconductor processes to pattern complex structures. As more and more procedures incorporate a high-temperature process, such as chemical vapor deposition (CVD), the need for thermally stable materials increases. For certain applications, a spin-on carbon (SOC) layer under the CVD layer is required to survive through a high-temperature process. ... » read more

Advanced Materials For High-Temperature Process Integration


From the last several lithography nodes, in the 14 to 10nm range, to the latest nodes, in the 7 to 5nm range, the requirements for patterning and image transfer materials have increased dramatically. One of the key pinch points is the tradeoff between planarization and the high-temperature stability required from carbon films used in patterning and post-patterning process integration. Patter... » read more

Super Planarizing Material For Trench And Via Arrays


As device design scales and becomes more complex, fine control of patterning and transfer steps is integral. Planarization of deep trenches and via arrays has always been a challenge. Aspect ratios continue to increase while critical dimensions shrink, and typical trench fill schemes are no longer able to meet the fill and planarization requirements. Traditional design of spin-on carbon (SOC) m... » read more