Development Of Planarizing Spin-On Carbon Materials For High-Temperature Processes

A coated film provides void-free fill in high-aspect trenches, excellent planarization properties, low shrinkage, and high-temp stability.

Multilayer lithography is used for advanced semiconductor processes to pattern complex structures. As more and more procedures incorporate a high-temperature process, such as chemical vapor deposition (CVD), the need for thermally stable materials increases. For certain applications, a spin-on carbon (SOC) layer under the CVD layer is required to survive through a high-temperature process. Additionally, these materials are sometimes desired to planarize the underlying topography. Designing organic films that have high-temperature stability while also allowing for good planarization is a challenge. Rigid polymers are typically very stable, but planarizing materials are normally highly flexible, so the trade-off between properties has to be carefully designed. The materials presented in this paper are stable up to 500°C, soluble in the solvents commonly used in the semiconductor industry, provide void-free fill in high-aspect trenches, and have excellent planarization properties. The coated film has very low shrinkage through the bake temperature and is stable at high-temperature conditions. The planarization on topography in the range from local distance (a few microns), to global distance (a few hundred microns) is equivalent to our best low-temperature SOC. © (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).
Authors: Runhui Huang, Xing-Fu Zhong, Jakub Koza, Boyu Zhang, Gu Xu, Sean Simmons

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