Reworking Established Nodes


New technology markets and a flattening in smartphone growth has sparked a resurgence in older technology processes. For many of these up-and-coming applications, there is no compelling reason to migrate to the latest process node, and equipment companies and fabs are rushing to fill the void. As with all electronic devices, the focus is on cost-cutting. But because these markets are likely ... » read more

A Look At Atomic Layer Deposition


Imagine being able to deposit a film of material just a few atomic layers at a time. As impossible as that sounds, atomic layer deposition (ALD) is a reality. In fact, it’s being used in an ever-increasing number of applications as an extremely precise and controllable process for creating thin films. Together with its etch counterpart – atomic layer etching (ALE) – ALD is enabling the us... » read more

Intel Inside The Package


Mark Bohr, senior fellow and director of process architecture and integration at Intel, sat down with Semiconductor Engineering to discuss the growing importance of multi-chip integration in a package, the growing emphasis on heterogeneity, and what to expect at 7nm and 5nm. What follows are excerpts of that interview. SE: There’s a move toward more heterogeneity in designs. Intel clearly ... » read more

Big Changes In Patterning


Aki Fujimura, CEO of [getentity id="22864" comment="D2S"], sat down with Semiconductor Engineering to discuss patterning issues at 10nm and below, including mask alignment, the need for GPU acceleration, EUV's future impact on the total number of masks, and what the re-introduction of curvilinear shapes will mean for design. SE: Patterning issues are getting a lot of attention at 10nm and 7n... » read more

Battling Fab Cycle Times


The shift from planar devices to finFETs enables chipmakers to scale their processes and devices from 16nm/14nm and beyond, but the industry faces several challenges at each node. Cost and technical issues are the obvious challenges. In addition, cycle time—a key but less publicized part of the chip-scaling equation—also is increasing at every turn, creating more angst for chipmakers and... » read more

BEOL Issues At 10nm And 7nm


Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

Etching Technology Advances


Let’s get really, really small. That directive from leading semiconductor companies and their customers is forcing the whole semiconductor supply chain to come up with new ways to design and manufacture ever-shrinking dimensions for chips. The current push is to 10nm and 7nm, but R&D into 5nm and 3nm is already underway. To put this in perspective, there are roughly two silicon atom... » read more

Inside Advanced Patterning


Prabu Raja, group vice president and general manager for the Patterning and Packaging Group at [getentity id="22817" e_name="Applied Materials"], sat down with Semiconductor Engineering to discuss the trends in patterning, selective processes and other topics. Raja is also a fellow at Applied Materials. What follows are excerpts of that conversion. SE: From your standpoint, what are the big... » read more

What Transistors Will Look Like At 5nm


Chipmakers are currently ramping up 16nm/14nm finFET processes, with 10nm and 7nm just around the corner. The industry also is working on 5nm. TSMC hopes to deliver a 5nm process by 2020. GlobalFoundries, Intel and Samsung are doing R&D for that node. But 5nm technology presents a multitude of unknowns and challenges. For one thing, the exact timing and specs of 5nm remain cloudy. The... » read more

The Week In Review: Manufacturing


Chipmakers At this week’s Flash Memory Summit, Samsung rolled out several new products, including its next-generation 3D NAND device and a solid-state drive (SSD) with capacities up to 32 terabytes. At the same time, Samsung introduced a new and high-performance SSD solution, dubbed the Z-SSD. Samsung’s Z-SSD shares the fundamental structure of V-NAND and has a unique circuit design and... » read more

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