tag: ALD

High-Temperature Stable Spin-On Carbon Materials For Advanced Pattern Transfer Applications
By Brewer Science - 16 Jun, 2022 - Comments: 0

In recent years a strong demand has arisen for spin-on carbon (SOC) materials compatible with high-temperature processes. This requirement is to enable usage of high-temperature SOC (HTSOC) materials in integration schemes utilizing chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) processes. In addition to compatibility with the high-temperature deposition processes, planari... » read more

Highly Selective Etch Rolls Out For Next-Gen Chips
By Mark LaPedus - 21 Mar, 2022 - Comments: 0

Several etch vendors are starting to ship next-generation selective etch tools, paving the way for new memory and logic devices. Applied Materials was the first vendor to ship a next-gen selective etch system, sometimes called highly-selective etch, in 2016. Now, Lam Research, TEL, and others are shipping tools with highly-selective etch capabilities, in preparation for futuristic devices su... » read more

Extending Copper Interconnects To 2nm
By Laura Peters - 17 Mar, 2022 - Comments: 0

Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

Using Process Modeling To Enhance Device Uniformity During Self-Aligned Quadruple Patterning
By Timothy Yang - 18 Nov, 2021 - Comments: 0

Despite the growing interest in EUV lithography, self-aligned quadruple patterning (SAQP) still holds many technical advantages in pattern consistency, simplicity, and cost. This is particularly true for very simple and periodic patterns, such as line & space patterns or hole arrays. The biggest challenge of SAQP is the inherently asymmetric mask shape. This asymmetry can create structural ... » read more

Nudging 2D semiconductors forward
By Katherine Derbyshire - 16 Sep, 2021 - Comments: 1

The buzz about 2D materials replacing silicon appears to be premature. While 2D semiconductors have emerged as potential successors, it's not clear when or even if that will happen. As Iuliana Radu, Imec's director of quantum and exploratory computing observed, the “end” of silicon has been predicted many times before. It is not clear when 2D semiconductors will need to be ready. In fac... » read more

Intelligent Agents for the Optimization of Atomic Layer Deposition
By Technical Paper Link - 05 Aug, 2021 - Comments: 0

"Atomic layer deposition (ALD) is a highly controllable thin film synthesis approach with applications in computing, energy, and separations. The flexibility of ALD means that it can access a massive chemical catalogue; however, this chemical and process diversity results in significant challenges in determining processing parameters that result in stable and uniform film growth with minimal pr... » read more

Manufacturing Bits: June 29
By Mark LaPedus - 29 Jun, 2021 - Comments: 0

Speeding up ALD with AI The U.S. Department of Energy’s (DOE) Argonne National Laboratory has developed various ways to make atomic layer deposition (ALD) more efficient by using artificial intelligence (AI). ALD is a deposition technique that deposits materials one layer at a time on chips. For years, ALD has been used for the production of DRAMs, logic devices and other products. In ... » read more

ALD Coatings For Critical Chamber Components
By Serena Brischetto - 18 Mar, 2021 - Comments: 0

With each transition to a new technology node, fab requirements for metal and particle contamination become more stringent, posing challenges for existing coating methods such as anodization or plasma spray that may not provide complete protection against contamination especially on critical chamber components with complex geometry. SEMI spoke with Beneq business executive Sami Sneck about... » read more

Novel Etch Technologies Utilizing Atomic Layer Process For Advanced Patterning
By TEL - 17 Dec, 2020 - Comments: 0

We demonstrated a high selective and anisotropic plasma etch of Si3N4 and SiC. The demonstrated process consists of a sequence of ion modification and chemical dry removal steps. The Si3N4 etch with H ion modification showed a high selectivity to SiO2 and SiC films. In addition, we have developed selective etch of SiC with N ion modification. On the other hand, in the patterning etch processes,... » read more

Advanced Materials For High-Temperature Process Integration
By James Lamb - 16 Jul, 2020 - Comments: 0

From the last several lithography nodes, in the 14 to 10nm range, to the latest nodes, in the 7 to 5nm range, the requirements for patterning and image transfer materials have increased dramatically. One of the key pinch points is the tradeoff between planarization and the high-temperature stability required from carbon films used in patterning and post-patterning process integration. Patter... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy