ALD-Oxide Semiconductors: Summary, Benefits And Challenges


A technical paper titled “Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook” was published by researchers at Hanyang University.

“In this review, to introduce ALD-oxide semiconductors, we provide: (a) a brief summary of the history and importance of ALD-based oxide semiconductors in industry, (b) a discussion of the benefits of ALD for oxide semiconductor deposition (in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering), and (c) an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications,” states the paper.

Find the technical paper here. Published February 2023.

Kim, Hye-Mi, Dong-Gyu Kim, Yoon-Seo Kim, Minseok Kim, and Jin-Seong Park. “Atomic Layer Deposition for Nanoscale Oxide Semiconductor Thin Film Transistors: Review and Outlook.” International Journal of Extreme Manufacturing (2023). DOI 10.1088/2631-7990/acb46d.

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