How To Fine-Tune Large-Area Molybdenum Disulfide Atomic Layer Deposition At 150°C

A technical paper titled "Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C" was published by researchers at Eindhoven University of Technology, University of Michigan, and University College Cork. Abstract: "Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable meth... » read more

Design of Selective Deposition Processes For Nanoscale Electronic Devices

A technical paper titled “Quantified Uniformity and Selectivity of TiO2 Films in 45-nm Half Pitch Patterns Using Area-Selective Deposition Supercycles” was published by researchers at IMEC, North Carolina State University, and KU Leuven. Abstract: "Area-selective deposition (ASD) shows great promise for sub-10 nm manufacturing in nanoelectronics, but significant challenges remain in scali... » read more

Research Bits: June 13

Converting heat to electricity Researchers at the National Institute of Standards and Technology (NIST) and University of Colorado Boulder fabricated a device to boost the conversion of heat into electricity. The technique involves depositing hundreds of thousands of microscopic columns of gallium nitride atop a silicon wafer. Layers of silicon are then removed from the underside of the waf... » read more

ALD-Oxide Semiconductors: Summary, Benefits And Challenges

A technical paper titled "Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook" was published by researchers at Hanyang University. "In this review, to introduce ALD-oxide semiconductors, we provide: (a) a brief summary of the history and importance of ALD-based oxide semiconductors in industry, (b) a discussion of the benefits of ALD for oxide... » read more

Surface-Activated ALD For Room-Temperature Bonding of Al2O3

A new technical paper titled "Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition" was published by researchers at Kyushu University. Abstract "In this study, room-temperature wafer bonding of Al2O3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the surface-activated bonding (SAB) metho... » read more

Large Area Process For Atomically Thin 2D Semiconductor, Using Scalable ALD

A new technical paper titled "Large-area synthesis of high electrical performance MoS2  by a commercially scalable atomic layer deposition process" by researchers at the University of Southampton, LMU Munich, and VTT Technical Research Centre of Finland. Abstract: "This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required... » read more

Graphene Devices: Suppressing Vibrations By Adding Vibrations (FLEET)

A technical paper titled "Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3" was published by researchers at ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University and University of Melbourne. According to FLEET's news article, the research found: -Ultra-thin, liquid-metal-printed oxid... » read more

Using Process Modeling To Enhance Device Uniformity During Self-Aligned Quadruple Patterning

Despite the growing interest in EUV lithography, self-aligned quadruple patterning (SAQP) still holds many technical advantages in pattern consistency, simplicity, and cost. This is particularly true for very simple and periodic patterns, such as line & space patterns or hole arrays. The biggest challenge of SAQP is the inherently asymmetric mask shape. This asymmetry can create structural ... » read more

Intelligent Agents for the Optimization of Atomic Layer Deposition

"Atomic layer deposition (ALD) is a highly controllable thin film synthesis approach with applications in computing, energy, and separations. The flexibility of ALD means that it can access a massive chemical catalogue; however, this chemical and process diversity results in significant challenges in determining processing parameters that result in stable and uniform film growth with minimal pr... » read more

Thinner Channels With 2D Semiconductors

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

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