tag: atomic layer deposition

Three New ALD/MLD Processes for Co-organic Thin Films (Aalto University, RUB et al.)
By Technical Paper Link - 24 Feb, 2026 - Comments: 0

A new technical paper, "Amido-Amine Co(II) Precursor-Based Atomic/Molecular Layer Deposition Processes for Cobalt-Organic Thin Films and Their Thermal Conversion to CoO Thin Films," was published by researchers at Aalto University, Ruhr University Bochum, Tyndall National Institute, ESRF et al. "Atomic/molecular layer deposition (ALD/MLD) offers a comprehensive process and application portfo... » read more

When Cleaning Chips Isn’t Clean Enough
By Gregory Haley - 19 Feb, 2026 - Comments: 0

Key Takeaways Contamination is becoming much more difficult to identify at the most advanced nodes, forcing fabs to rethink how control is achieved. Issues may show up as electrical or statistical anomalies, not particles, and not at time zero. Reliable classification is needed to identify critical contamination and reduce time and effort spent on nuisance failures. For much... » read more

Overview of ALD-Driven Oxide Semiconductors for High Density, Low Power Memory Architectures (Hanyang Univ., imec)
By Technical Paper Link - 25 Jan, 2026 - Comments: 0

A new technical paper titled "Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges" was published by researchers a Hanyang University and imec. Abstract "Oxide semiconductors (OSs), introduced by the Hosono group in the early 2000s, have evolved from display backplane materials to promising candidates for advanced memory and logic ... » read more

Every Atom Now Counts In Advanced Chip Manufacturing
By Gregory Haley - 22 Jan, 2026 - Comments: 0

Artificial-intelligence workloads are pushing semiconductor design to a point where traditional scaling strategies are running out of room. Performance improvements that once came from shrinking transistors now depend increasingly on how devices are stacked, interconnected, and isolated. Transistor scaling still matters, but advanced device architectures no longer can accommodate the power dens... » read more

Research Bits: Jan. 20
By Jesse Allen - 20 Jan, 2026 - Comments: 0

ALD for Ru wiring Researchers from Ulsan National Institute of Science and Technology (UNIST), Hongik University, and Tanaka Precious Metal Technologies developed an atomic layer deposition (ALD) process for creating chip interconnects using a ruthenium (Ru) precursor with a thermal stability up to 400 °C. The high-temperature ALD process can produce dense, high-quality Ru films without deg... » read more

Precision Under Pressure: Managing Materials Complexity In Advanced Packaging
By Gregory Haley - 18 Sep, 2025 - Comments: 0

In the race to extend Moore's Law through advanced packaging, the limits of precision are no longer defined solely by lithography. Increasingly, they are dictated by the unpredictable behavior of materials. Semiconductor packaging today is no longer limited to just silicon and copper. It includes an expanding range of polymers, adhesives, dielectrics, exotic metals, along with substrates suc... » read more

Viability of aZnMIm As A Resist For EUV Lithography (Johns Hopkins, Northwestern, Intel et al.)
By Technical Paper Link - 27 Jun, 2025 - Comments: 0

A new technical paper (preprint) titled "Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition" was published by researchers at Johns Hopkins University, Northwestern University, Intel Corporation, Bruker Nano, EUV Tech and Lawrence Berkeley National Lab. The paper states "This study demonstr... » read more

Scalability of Nanosheet Oxide FETs for Monolithic 3-D Integration
By Technical Paper Link - 22 Oct, 2024 - Comments: 0

A new technical paper titled "High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling" was published by researchers at The University of Tokyo and Nara Institute of Science and Technology. Abstract "We have investigated the scaling potential of nanosheet oxide semiconductor FETs (NS OS FETs) for monolithic 3-D (M3D) integration in t... » read more

Enabling Advanced Devices With Atomic Layer Processes
By Katherine Derbyshire - 18 Apr, 2024 - Comments: 2

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect fabrication at the most advanced nodes. ALD can be speeded up somewhat, but the real shift is the rising value of precise composition and thickness control at the most advanced nodes, which makes the ext... » read more

Performing Multiple, Simultaneous Depositions In A High-Throughput, Multiplexing ALD/MLD-Style Reactor
By Technical Paper Link - 22 Feb, 2024 - Comments: 0

A technical paper titled “High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes” was published by researchers at University of Washington. Abstract: "An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reac... » read more

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