ESD Co-Design For 224G And 112G SerDes In FinFET Technologies


In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it's crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device's lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) dam... » read more

Characterization, Modeling, And Model Parameter Extraction Of 5nm FinFETs


A technical paper titled “A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs” was published by researchers at IIT Kanpur, MaxLinear Inc., and University of California Berkeley. Abstract: "This paper aims to provide insights into the thermal, analog, and RF attributes, as well as a novel modeling methodology, for the FinFET at the industry stan... » read more

Demonstrating The Capabilities Of Virtual Wafer Process Modeling And Virtual Metrology


A technical paper titled “Review of virtual wafer process modeling and metrology for advanced technology development” was published by researchers at Coventor Inc., Lam Research. Abstract: "Semiconductor logic and memory technology development continues to push the limits of process complexity and cost, especially as the industry migrates to the 5 nm node and beyond. Optimization of the p... » read more

A Flip-Chip, Co-Packaged With Photodiode, High-speed TIA in 16nm FinFET CMOS


A technical paper titled "A 112-Gb/s —8.2-dBm Sensitivity 4-PAM Linear TIA in 16-nm CMOS With Co-Packaged Photodiodes" was published by researchers at University of Toronto, Alphawave IP, and Huawei Technologies Canada. Abstract: "A flip-chip co-packaged linear transimpedance amplifier (TIA) in 16-nm fin field effect transistor (FinFET) CMOS demonstrating 112-Gb/s four-level pulse-amplitude... » read more

Nanosheet GAAFETs: Compact Modeling (Politecnico di Torino)


A technical paper titled “NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance” was published by researchers at Politecnico di Torino. Abstract: "NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are expected to replace FinFETs in a few years, as ... » read more

ESD Co-Design For High-Speed SerDeS In FinFET Technologies


An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device (die) is assembled in the system. To avoid yield loss due to ESD damage during this early phase, on-chip ESD protection measures are applied to provide a certain degree of ESD robustness. The componen... » read more

The History Of CMOS


Since CMOS has been around for about 50 years, a comprehensive history would be a book. This blog focuses on what I consider the major transitions. NMOS Before CMOS, there was NMOS (also PMOS, but I have no direct experience with that). An NMOS gate consisted of a network of N-transistors between the output and Vss, and a resistor (actually a transistor with an implant) between the output and... » read more

The Impact Of Metal Gate Recess Profile On Transistor Resistance And Capacitance


In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize the metal gate recess dimensions. However, there are limits to reducing this capacitance if you simply remove more of the metal material, since this can modify capacitance unexpectedly through chan... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines


Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

IEDM: TSMC N3 Details


I attended IEDM in San Francisco in December. There were two presentations about TSMC's N3 process. This is actually a bit of a misnomer since TSMC has two N3 processes, one simply called N3. The other (the second generation) is called N3E. The two papers were: Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond A 3nm CMOS FinFl... » read more

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