Ge-Based Multigate SBFETs Operated In An NDR Mode (TU Wien, JKU)


A new technical paper titled "Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors" was published by researchers at TU Wien and JKU (Johannes Kepler University). Abstract: "The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance... » read more

Contacting Individual On-Surface Synthesized Graphene Nanoribbons In A Multigate Transistor Geometry 


A technical paper titled “Contacting individual graphene nanoribbons using carbon nanotube electrodes” was published by researchers at Swiss Federal Laboratories for Materials Science and Technology, Peking University, University of Warwick, National Center for Nanoscience and Technology (China), Max Planck Institute for Polymer Research, University of Bern, University of Basel, and ETH Zur... » read more