A new research paper titled "Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages" was published by researchers at Sungkyunkwan University and Korea University.
Abstract
"Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some pote...
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