tag: nanowires

Research Bits: Jan. 20
By Jesse Allen - 20 Jan, 2025 - Comments: 0

Self-correcting memristor array Researchers at Korea Advanced Institute of Science and Technology (KAIST), Seoul National University, Sungkyunkwan University, Electronics and Telecommunications Research Institute (ETRI), and Yonsei University developed a memristor-based neuromorphic chip that can learn and correct errors, enabling it to adapt to immediate environmental changes. The system c... » read more

Loss Processes in Electrochemically Charged Semiconductor Nanocrystal Films (TU Delft)
By Technical Paper Link - 16 Jan, 2025 - Comments: 0

A new technical paper titled "Where Do the Electrons Go? Studying Loss Processes in the Electrochemical Charging of Semiconductor Nanomaterials" was published by researchers at Delft University of Technology. Abstract "Electrochemical charging of films of semiconductor nanocrystals (NCs) allows precise control over their Fermi level and opens up new possibilities for use of semiconductor NC... » read more

Research Bits: Mar. 5
By Jesse Allen - 05 Mar, 2024 - Comments: 0

Anti-ambipolar transistor Materials scientists from the City University of Hong Kong propose using transistors made of mixed-dimensional nanowires and nanoflakes to create multivalued logic devices. By combining GaAsSb nanowires and MoS2 nanoflakes, the team created a hetero-transistor with anti-ambipolar transfer characteristics, in which positive (holes) and negative (electron) charge car... » read more

Research Bits: December 5
By Jesse Allen - 05 Dec, 2023 - Comments: 0

Neuromorphic nanowires Researchers from UCLA and University of Sydney built an experimental computing system physically modeled after the biological brain. The device is composed of a tangled-up network of wires containing silver and selenium that were allowed to self-organize into a network of entangled nanowires on top of an array of 16 electrodes. The nanowire network physically reconfigure... » read more

What Designers Need To Know About GAA
By Brian Bailey - 13 Apr, 2023 - Comments: 3

While only 12 years old, finFETs are reaching the end of the line. They are being supplanted by gate-all-around (GAA), starting at 3nm [1], which is expected to have a significant impact on how chips are designed. GAAs come in two main flavors today — nanosheets and nanowires. There is much confusion about nanosheets, and the difference between nanosheets and nanowires. The industry still ... » read more

Vertical Nanowire Gate-All-Around FETs based on the GeSn-Material System Grown on Si
By Technical Paper Link - 10 Apr, 2023 - Comments: 0

A new technical paper titled "Vertical GeSn nanowire MOSFETs for CMOS beyond silicon" was published by researchers at Peter Grünberg Institute 9, JARA, RWTH Aachen University, CEA, LETI, University of Grenoble Alpes, University of Leeds, and IHP. "Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transcon... » read more

Technique For Printing Electronic Circuits Onto Curved & Corrugated Surfaces Using Metal Nanowires (NC State)
By Technical Paper Link - 10 Jan, 2023 - Comments: 0

A technical paper titled "Curvilinear soft electronics by micromolding of metal nanowires in capillaries" was published by researchers at North Carolina State University. “We’ve developed a technique that doesn’t require binding agents and that allows us to print on a variety of curvilinear surfaces,” says Yuxuan Liu, first author of the paper and a Ph.D. student at NC State in this ... » read more

Phononic and Magnonic Properties of 1D MoI3 Nanowires
By Technical Paper Link - 28 Nov, 2022 - Comments: 0

A new technical paper titled "Elemental excitations in MoI3 one-dimensional van der Waals nanowires" was published by researchers at NIST, UC Riverside, University of Georgia, Theiss Research Inc, and Stanford University. "We described here the elemental excitations in crystals of MoI3 a vdW [van der Waals] material with a true-1D crystal structure. Our measurements reveal anomalous temperat... » read more

3D Racetrack Memory Device (Max Planck)
By Technical Paper Link - 26 Oct, 2022 - Comments: 0

A new technical paper titled "Three-dimensional racetrack memory devices designed from freestanding magnetic heterostructures" was published by researchers at Max Planck Institute of Microstructure Physics in Halle, Germany. "Magnetic racetrack memory encodes data in a series of magnetic domain walls that are moved by current pulses along magnetic nanowires. To date, most studies have focuse... » read more

Highly Dense And Vertically Aligned Sub-5 nm Silicon Nanowires
By Technical Paper Link - 11 Oct, 2022 - Comments: 0

A new technical paper titled "Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap" was published by researchers at Northeastern University, Korea Institute of Science and Technology, Gyeongsang National University and others. "Here, we prepare highly dense and vertically aligned sub-5 nm silicon nanowires with length/diameter aspect r... » read more

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