Inspecting And Testing GaN Power Semis


As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap power semiconductors offer automakers a range of new EV solutions, but questions remain on how to meet the stringent quality goals of the automotive industry. Among t... » read more

GaN Application Base Widens, Adoption Grows


Gallium nitride (GaN) is beginning to show up across a broad range of power semiconductor applications due to its wide bandgap, enabling fast-charging, very high speeds, and much smaller form factors than silicon-based chips. Unlike silicon carbide (SiC), another wide-bandgap technology, GaN is a lateral rather than a vertical device. GaN tops out at about 900 volts, which limits its use in ... » read more

Week In Review: Design, Low Power


Tools Cadence's digital and custom/analog flows were certified for TSMC's N3 and N4 process technologies. Updates for the digital flow includes efficient processing of large libraries, additional accuracy during library cell characterization and static timing analysis, and support for accurate leakage calculation required in N3 and static power calculation for new N3 cells. Synopsys' digita... » read more

Week In Review: Design, Low Power


Siemens Digital Industries Software acquired Fractal Technologies, a provider of tools for IP validation and comparison checks of standard cell libraries, IO, and hard IP that reports mismatches or modeling errors, as well as comparing new IP releases close to tape-out. Siemens plans to add Fractal’s technology to the Xcelerator portfolio, joining the Solido software product family, which inc... » read more

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