Gallium Oxide Flash Memory (KAUST & IIT)


A technical paper titled "Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics" was published by researchers at King Abdullah University of Science and Technology (KAUST) and Indian Institute of Technology. Abstract: "This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film... » read more