5 Novel Layout Design Methodologies For The 3nm Nanosheet FET Library (Samsung, KNU)


A new technical paper titled "Design Technology Co-Optimization and Time-Efficient Verification for Enhanced Pin Accessibility in the Post-3-nm Node" was published by researchers at Samsung Electronics and Kyungpook National University (KNU). Abstract: "As the technology nodes approach 3 nm and beyond, nanosheet FETs (NSFETs) are replacing FinFETs. However, despite the migration of devices ... » read more

Artificial Neural Network (ANN)-Based Model To Evaluate The Characteristics of A Nanosheet FET (NSFET)


This new technical paper titled "Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors" was published by researchers at SungKyunKwan University, Korea. Abstract: "In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generat... » read more