Flash Getting Stacked High-Bandwidth Version


Key takeaways: A new HBF 3D flash stack is similar to HBM for use in AI processing. HBF capacity will be much higher, allowing static storage of AI model weights, with optimized read speed. Samples are due out later this year, with accelerators featuring it coming out next year. AI inference using modern models requires billions of parameters, and moving them to where they c... » read more

New Error Correcting Code And Non-Volatile Memory Options For Memory BIST


Tessent MemoryBIST from Siemens EDA provides a complete solution for at-speed test, diagnosis, repair, debug and characterization of embedded memories. Leveraging a flexible hierarchical architecture, built-in self-test (BIST) and self-repair can be integrated at both the individual core level and the top level. Tessent MemoryBIST efficiently addresses the ever-increasing demand for testing ... » read more

RRAM: Transforming Memory Solutions For AI-driven IoT Devices And Embedded Systems


Artificial Intelligence (AI) and Machine Learning (ML) applications are driving increased demand for high-performance, low-power memory solutions across consumer, medical, and industrial markets. These applications require efficient, Non-Volatile Memory (NVM) to process, store, and retain large volumes of data, as well as support frequent Firmware Over-The-Air (FOTA) updates. In the consumer... » read more

Volatile And Non-Volatile NEM Switches Fabricated In A CMOS-Compatible SOI Foundry Platform (KTH, U. of Bristol, EPFL, Imec)


A new technical paper titled "Volatile and non-volatile nano-electromechanical switches fabricated in a CMOS-compatible silicon-on-insulator foundry process" was published by researchers at KTH Royal Institute of Technology, University of Bristol, EPFL, imec, and Ghent University. Abstract "Nanoelectromechanical (NEM) switches have the advantages of zero leakage current, abrupt switching ch... » read more

Emerging NVM: Review Of Emerging Memory Materials And Device Architectures


A new technical paper titled "Emerging Nonvolatile Memory Technologies in the Future of Microelectronics" was published by researchers at Texas A&M University, University of Massachusetts and USC. Abstract "Memory technologies are central to modern computing systems, performing essential functions that range from primary data storage to advanced tasks, such as in-memory computing for ... » read more

Research Bits: July 7


3D NAND PUF Researchers from Seoul National University developed a new hardware security technology based on commercially available 3D NAND flash memory. The approach is an adaptation of physical unclonable functions (PUFs) with the ability to hide a security key under user data when not in use and reveal it only when needed. The same memory space used for storing security keys can be repurpos... » read more

V-NAND PUFs (Seoul National University, SK hynix)


A new technical paper titled "Concealable physical unclonable functions using vertical NAND flash memory" was published by researchers at Seoul National University and SK hynix. The paper proposes "a concealable PUF using V-NAND flash memory by generating PUF data through weak Gate-Induced-Drain-Leakage (GIDL) erase." Find the technical paper here. June 2025. Park, SH., Koo, RH., Yang,... » read more

Single Transistor Memory Cell C2RAM Based On FDSOI For Quantum And Neuromorphic


A new technical paper titled "An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures" was published by researchers at Forschungszentrum Jülich, RWTH Aachen University and SOITEC. Abstract: "Efficient computing in cryogenic environments, including classical von Neumann, quantum, and neuromorphic systems, is poised to transform big data processing. The que... » read more

Design Space For The Device-Circuit Codesign Of NVM-Based CIM Accelerators (TSMC)


A new technical paper titled "Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators" was published by TSMC researchers. Abstract "Unprecedented penetration of artificial intelligence (AI) algorithms has brought about rapid innovations in electronic hardware, including new memory devices. Nonvolatile memory (NVM) devices offer one s... » read more

Design Space for the Device-Circuit Codesign of NVM-Based CIM Accelerators (TSMC)


A new technical paper/mini-review titled "Assessing Design Space for the Device-Circuit Codesign of Nonvolatile Memory-Based Compute-in-Memory Accelerators" was published by researchers at TSMC and National Tsing Hua University. Abstract "Unprecedented penetration of artificial intelligence (AI) algorithms has brought about rapid innovations in electronic hardware, including new memory devi... » read more

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