A new technical paper titled "Efficient Magnetization Switching via Orbital-to-Spin Conversion in Cr/W-Based Heterostructures" by researchers at National Taiwan University and TSMC.
Abstract
"A highly efficient spin–orbit torque (SOT) switching mechanism is crucial for the realization of practical SOT magnetic random-access memory (MRAM). This study proposes a Cr/W-based spin current sour...
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