Nonvolatile Electrochemical Memory Cell For Temperatures Up To 600°C (U. Of Michigan, Sandia)


A new technical paper titled "Nonvolatile electrochemical memory at 600°C enabled by composition phase separation" was published by researchers at University of Michigan and Sandia National Laboratories. "Moore’s law has led to monumental advances in computing over the past 50 years. However, one shortcoming of silicon-based logic and memory devices is their limited temperature range, typ... » read more

Nonvolatile ECRAM With A Short-Circuit Retention Time Several Orders of Magnitude Higher Than Previously Shown


A new technical paper titled "Nonvolatile Electrochemical Random-Access Memory Under Short Circuit" was published by researchers at University of Michigan and Sandia National Laboratories. Abstract "Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attainin... » read more