High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)


A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

High-Performance P-Type FET Arrays With Single-Crystal 2D Semiconductors And Fermi-Level-Tuned vdW Contact Electrodes


A technical paper titled “Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes” was published by researchers at Ulsan National Institute of Science and Technology (UNIST), University of Pennsylvania, Institute for Basic Science (IBS), Sogang University, and Changwon National University. Abstract: "High-performance p-type t... » read more

Power/Performance Bits: June 1


Stronger PUFs Researchers from Ohio State University and Potomac Research propose a new version of physical unclonable functions, or PUFs, that could be used to create secure ID cards, to track goods in supply chains, and as part of authentication applications. "There's a wealth of information in even the smallest differences found on computers chips that we can exploit to create PUFs," sai... » read more