How FinFET Device Performance Is Affected By Epitaxial Process Variations


By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Fins And Wires – How Do We Get To 5nm?


As the industry moves beyond 10nm to the 7nm and 5nm nodes, fundamental shifts are needed to address scaling challenges. Among the priority concerns driving industry changes, particularly with respect to materials and architecture, is the impact on transistor performance from rising parasitic resistance and parasitic capacitance or RC. I spoke about this industry dilemma recently at the SEMICON... » read more