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Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh Environments


On the example of a 28nm SRAM array, this work presents a novel reliability study which takes into account the effect of externally applied mechanical stress in circuit simulations. This method is able to predict the bit failures caused by the stress via the piezoresistive effect. The stability of each single SRAM cell is simulated using static noise margin. Finally, the whole array’s behavio... » read more