Research Bits: Mar. 25


2D materials in 3D transistors Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking: nano-sheet FETs, nano-fork FETs, and nano-plate FETs. The nano-plate FET architecture, which exploits lateral stacking of 2D layers, was found to maximize the g... » read more

Eliminating Interfacial Delamination in High-Power Automotive Devices


Highly reliable power devices are always demanded by the automotive industry, especially with the surge in electric vehicle (EV) sales. These devices are expected to withstand harsh conditions and, at the same time, deliver consistent performances. Interfacial delamination is a significant factor that can impact the reliability performance of power devices. It refers to the separation of lay... » read more

GaN Power Semiconductors – 2025 Predictions


GaN power semiconductors are on a tremendous growth trajectory. GaN is on its way to reaching more tipping points in its adoption in more industries. Consumer chargers and adapters have been the forerunner, more applications are expected to tip this year, with many others to follow in time. Still, there are some headwinds for GaN to reach this adoption level. Why is that and how can we overcome... » read more

Research Bits: Feb. 4


High-power diamond transistors Researchers from the University of Glasgow, RMIT University, and Princeton University created a new diamond transistor for high-power electronics that remains switched off by default. The performance of the diamond was improved by coating it in hydrogen atoms followed by layers of aluminum oxide. “The challenge for power electronics is that the design of the... » read more

An Innovative Hybrid Cleaning Approach For Contaminant Removal in Semiconductor Packaging


The growing demand for power semiconductors, which control large currents and voltages, has resulted in their widespread use in various electronic devices, including electric vehicles (EVs). The requirement for greater performance and smaller devices has led to increased operating temperatures for these power semiconductors. This rise in temperature poses a challenge as it often leads to delami... » read more

Successful Design Of Power Management Chips


With an industry as large as semiconductors, there are often surprises lurking in some of the more specialized product categories. Everyone knows that huge chips such as CPUs and GPUs command high prices and that memory chips are ubiquitous. However, the domain of power management integrated circuits (PMICs) is less well known to many observers. PMICs are impressive in terms of their technol... » read more

Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test


In the era of megatrends such as electric vehicles (EVs), new technologies are emerging to keep up with evolving demands. One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for high-performance power systems. Innovating test protocols to handle wide bandgap materials For many power-related applications, the semiconductor in... » read more

Research Bits: Oct. 29


Micro-LED DUV maskless lithography Researchers from the University of Science and Technology of China, Anhui GaN Semiconductor, and Wuhan University developed a vertically integrated micro-LED array for deep ultraviolet (DUV) maskless photolithography. The team fabricated a DUV display integrated chip with 564 pixels-per-inch density that uses a three-dimensional vertically integrated devic... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 2


In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: high-power silicon carbide modules, their key features, and the multiple system benefits they enable. Silicon carbide power modules and hybrid-propulsion trains: It’s a match! As we inch toward... » read more

Non-Destructive Measurement of Bottom Width in Deep Trench Isolation Structures using IRCD Metrology


As scaling in semiconductor devices continues, the aspect ratios of deep trench isolation (DTI) structures have increased. DTI structures are used in power devices, power management ICs and image sensors as a method to isolate active devices by reducing crosstalk, parasitic capacitance, latch-up and allowing for an increase breakdown voltage of active devices. Measurement of these structures in... » read more

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