Silicon Carbide’s Superpowers


As we enter a new computing era driven by the Internet of Things (IoT), Big Data and Artificial Intelligence (AI), demand is growing for more energy-efficient chips. In this context, we usually think about Moore’s Law and reducing the size of transistors. However, advances in power semiconductors are not governed by node size reduction. Silicon power switches, such as MOSFETs and IGBTs, ar... » read more

200mm Cools Off, But Not For Long


After years of acute shortages, 200mm fab capacity is finally loosening up, but the supply/demand picture could soon change with several challenges on the horizon. 200mm fabs are older facilities with more mature processes, although they still churn out a multitude of today’s critical chips, such as analog, MEMS, RF and others. From 2016 to 2018, booming demand for these and other chips ca... » read more

Electric Cars Gain Traction, But Challenges Remain


Battery-powered electric vehicles are expected to reach a milestone in terms of shipments in 2019, but the technology faces several significant hurdles to gain wider adoption in the market. Limited driving range, high costs, battery issues, and a spotty charging infrastructure are the main challenges for battery electric vehicles (BEVs). In addition, there are issues with various power semic... » read more

GaN Power Semi Biz Heats Up


The market for devices based on gallium nitride (GaN) technology is heating up amid the push for faster and more power efficient systems. Today, [getkc id="217" kc_name="GaN"] is widely used in the production of LEDs. In addition, it is gaining steam in the radio-frequency (RF) market. And the GaN-based power semiconductor market finally appears ready to take off, after several false starts ... » read more

What Happened To GaN And SiC?


About five years ago, some chipmakers claimed that traditional silicon-based power MOSFETs had hit the wall, prompting the need for a new power transistor technology. At the time, some thought that two wide-bandgap technologies—gallium nitride (GaN) on silicon and silicon carbide (SiC) MOSFETs—would displace the ubiquitous power MOSFET. In addition, GaN and SiC were supposed to pose a t... » read more