tag: power semiconductors

GaN Power Devices Go Vertical
By Katherine Derbyshire - 18 Jun, 2026 - Comments: 0

Key Takeaways: On paper, GaN is an excellent candidate for high-voltage power applications. That potential has been difficult to realize due to the lack of sufficiently high-quality starting material. In particular, high-voltage applications require vertical designs. Recent advances in GaN growth are making these designs more feasible. Promising designs and complete process flows hav... » read more

GaN Power Devices Power Up
By Katherine Derbyshire - 03 Jun, 2026 - Comments: 0

Key Takeaways: GaN devices are gaining traction due to their ability to tolerate higher voltages. New approaches such as chiplets offer faster switching with less loss. The first applications to benefit from GaN will be low-voltage consumer devices; industrial applications require more work. As electrical power displaces fossil fuels in more applications, system designers ne... » read more

The Specialty Device Surge Part 3: Solving The Process Control Challenges Of MEMS, Photonics, Co-Packaged Optics, And More
By Christopher Haire - 12 May, 2026 - Comments: 0

Every day, consumers rely on an invisible network of specialty semiconductor devices without realizing it. The smartphone in your pocket is a good place to start. It knows when you rotate the screen thanks to MEMS sensors, and its camera delivers crisp images through advanced CMOS image sensors. Meanwhile, fast charging technology, wireless connectivity, facial recognition, and high-frequency c... » read more

Breakthrough Thin GaN Chiplet Technology
By Han Wui Then - 16 Apr, 2026 - Comments: 0

Researchers at Intel Foundry have demonstrated a gallium nitride (GaN) chiplet technology built on 300 mm GaN-on-silicon wafers, marking a significant leap forward in semiconductor design. Presented at the 2025 IEEE International Electron Devices Meeting (IEDM), this work tackles one of the most pressing challenges in modern computing: how to deliver more power, speed, and efficiency in an incr... » read more

The Specialty Device Surge Part 2: The Process Control Challenges Of MEMS, Co-Packaged Optics, And More
By Christopher Haire - 07 Apr, 2026 - Comments: 0

In a world where high-bandwidth memory, GPUs, and advanced AI packages are all the rage, it is easy to forget the important role specialty devices play. These unsung heroes of modern life perform critical functions across a wide range of industries, including automotive, telecommunications, data centers, emerging AI hardware ecosystems, and consumer electronics, just like the smartphone in your... » read more

Status of WBG Device Reliability in Automotive (U. Bremen et al.)
By Technical Paper Link - 31 Mar, 2026 - Comments: 0

A new technical paper, "Reliability of Wide Bandgap Semiconductors for Automotive Applications," was published by the Universitat Bremen, Technische Universitat Chemnitz, BMW, Robert Bosch GmbH, Infineon, Semikron Danfoss, and FH Dortmund. Abstract "Wide bandgap (WBG) semiconductor devices offer tremendous advantages over their silicon counterparts. Automotive applications benefit particu... » read more

The Specialty Device Surge, Part 1: Wafer Size Transitions Are Powering The Future Of Specialty Devices And Bringing New Challenges
By Christopher Haire - 10 Mar, 2026 - Comments: 0

Specialty devices are the unsung heroes of modern life. For many in the semiconductor industry today, the spotlight is on the SiC and GaN power devices used in automotive, green energy, fast-charge consumer electronics (CE), and high-performance computing (HPC) applications (Figures 1 and 2). However, specialty devices are more than just power devices. They are a broad class of semiconductor... » read more

A Guide To Fast Switching GaN Challenges And Solutions
By Kimia Azad - 05 Mar, 2026 - Comments: 0

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While the wide-bandgap material can certainly improve a system’s overall efficiency, it can also be more vulnerable to spurious turn-ons and other design challenges. That’s what makes top-of-the-line packaging, such as Infineon HiRel’s new PowIR-SMD, critical in space powe... » read more

Optimize Digital Payloads With Radiation Hardened GaN
By Kimia Azad - 05 Feb, 2026 - Comments: 0

As the demand for greater communication bandwidth continues to grow, next-generation satellites must deliver higher data throughput for digital payloads. This shift to digital payloads requires engineers to reassess key design parameters, such as material needs, operational factors, and radiation robustness, to ensure optimal performance in their space power systems. Infineon HiRel’s new radi... » read more

Research Bits: Sept. 16
By Jesse Allen - 16 Sep, 2025 - Comments: 0

Beyond-EUV resists Researchers from Johns Hopkins University, East China University of Science and Technology, École Polytechnique Fédérale de Lausanne (EPFL), Soochow University, Brookhaven National Laboratory, and Lawrence Berkeley National Laboratory propose a combination of new resist materials and a higher-powered EUV process that could enable smaller chip feature sizes. The "beyond... » read more

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