3-Channel Package-Scale Galvanic Isolation Interface for SiC and GaN Power Switching Converters


A new technical paper titled "A Three-Channel Package-Scale Galvanic Isolation Interface for Wide Bandgap Gate Drivers" was published by STMicroelectronics and DIEEI, Università di Catania. Abstract "This article presents the design of a three-channel package-scale galvanic isolation interface for SiC and GaN power switching converters. The isolation interface consists of two side-by-sid... » read more