Challenges In Backside Power Delivery


One of the key technologies to enable scaling below 3nm involves delivering of power on the backside of a chip. This novel approach enhances signal integrity and reduces routing congestion, but it also creates some new challenges for which today there are no simple solutions. Backside power delivery (BPD) eliminates the need to share interconnect resources between signal and power lines on t... » read more

Extending Copper Interconnects To 2nm


Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

Inside Intel’s Ambitious Roadmap


Ann Kelleher, senior vice president and general manager of Technology Development at Intel, sat down with Semiconductor Engineering to talk about the company’s new logic roadmap, as well as lithography, packaging, and process technology. What follows are excerpts of that discussion. SE: Intel recently disclosed its new logic roadmap. Beyond Intel 3, the company is working on Intel 20A. Wit... » read more