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Extending Copper Interconnects To 2nm


Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

Inside Intel’s Ambitious Roadmap


Ann Kelleher, senior vice president and general manager of Technology Development at Intel, sat down with Semiconductor Engineering to talk about the company’s new logic roadmap, as well as lithography, packaging, and process technology. What follows are excerpts of that discussion. SE: Intel recently disclosed its new logic roadmap. Beyond Intel 3, the company is working on Intel 20A. Wit... » read more